Access the full text.
Sign up today, get DeepDyve free for 14 days.
Liqing Lu, A. Bryant, J. Hudgins, P. Palmer, E. Santi (2010)
Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional EffectsIEEE Transactions on Industry Applications, 46
K. Tseng, P. Palmer (1994)
Modelling of power semiconductor devices for use in circuit simulationsProceedings of 1994 Power Electronics Specialist Conference - PESC'94, 1
P. Leturcq (1997)
A study of distributed switching processes in IGBTs and other power bipolar devicesPESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 1970-71. Power Processing and Electronic Specialists Conference 1972, 1
Y. Yue, J. Liou, I. Batarseh (1996)
An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditionsSolid-state Electronics, 39
R. Kolessar, H. Nee (2000)
Physics-based power device models in SABER-implementation issuesCOMPEL 2000. 7th Workshop on Computers in Power Electronics. Proceedings (Cat. No.00TH8535)
M. Rodríguez, A. Claudio, M. Cotorogea, L. Gonzalez, J. Aguayo (2010)
Reconfigurable Special Test Circuit of physics-based IGBT models parameter extractionSolid-state Electronics, 54
A. Hefner, Daniel, Diebolt (1991)
An experimentally verified IGBT model implemented in the Saber circuit simulatorPESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference
R. Skeel, M. Berzins (1990)
A Method for the Spatial Discretization of Parabolic Equations in One Space VariableSIAM J. Sci. Comput., 11
M. Cotorogea (2009)
Physics-Based SPICE-Model for IGBTs With Transparent EmitterIEEE Transactions on Power Electronics, 24
IEEE Transactions on Power Electronics, 9
D. Mingxing, W. Kexin (2011)
A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region, 60
B. Fatemizadeh, P. Lauritzen, D. Siber (1996)
Modeling of power semiconductor devices, problems, limitations and future trends5th IEEE Workshop on Computers in Power Electronics
PurposeThe purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.Design/methodology/approachA numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.FindingsThe results of the proposed model are very close to the tested ones.Originality/valueA mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Nov 6, 2017
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.