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Study the Effect of Cu Doping on Optical and Structural Properties of NiO Thin Films

Study the Effect of Cu Doping on Optical and Structural Properties of NiO Thin Films AbstractIn this work, copper doped nickel oxide as the thin films have been elaborated by a spin coating method, the nickel chloride hexahydrate (0.8M) and copper (II) chloride dehydrate (Cu/Ni = 0, 2.15, 4.3, 8.6 and 12.9 At.%) were used to prepare the Cu doped NiO thin films. The Cu doped NiO thin films were heated at a crystallization temperature of 600 °C with 2 h. The obtained thin films by spin coater method have a film thickness in the order of 400 nm. The prepared Cu doped NiO thin films have a polycrystalline with cubic structure (200) peak was observed. The optical property shows that the prepared thin films have a transmittance of about 70 %. The Cu doped NiO thin films have minimum bandgap energy is 3.85 eV at 12.9 at.%, the thin film deposited at 8.6 at.% has the highest value of Urbach energy is 425 meV. The Cu doped NiO thin films have a high electrical conductivity of 8.6 at% it is 7 (Ω.cm)−1. The prepared Cu doped NiO thin film was suitable for gas sensing applications due to the existing phase and higher electrical conductivity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Annals of West University of Timisoara - Physics de Gruyter

Study the Effect of Cu Doping on Optical and Structural Properties of NiO Thin Films

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Publisher
de Gruyter
Copyright
© 2020 Said Benramache et al., published by Sciendo
ISSN
1224-9718
eISSN
1224-9718
DOI
10.2478/awutp-2020-0002
Publisher site
See Article on Publisher Site

Abstract

AbstractIn this work, copper doped nickel oxide as the thin films have been elaborated by a spin coating method, the nickel chloride hexahydrate (0.8M) and copper (II) chloride dehydrate (Cu/Ni = 0, 2.15, 4.3, 8.6 and 12.9 At.%) were used to prepare the Cu doped NiO thin films. The Cu doped NiO thin films were heated at a crystallization temperature of 600 °C with 2 h. The obtained thin films by spin coater method have a film thickness in the order of 400 nm. The prepared Cu doped NiO thin films have a polycrystalline with cubic structure (200) peak was observed. The optical property shows that the prepared thin films have a transmittance of about 70 %. The Cu doped NiO thin films have minimum bandgap energy is 3.85 eV at 12.9 at.%, the thin film deposited at 8.6 at.% has the highest value of Urbach energy is 425 meV. The Cu doped NiO thin films have a high electrical conductivity of 8.6 at% it is 7 (Ω.cm)−1. The prepared Cu doped NiO thin film was suitable for gas sensing applications due to the existing phase and higher electrical conductivity.

Journal

Annals of West University of Timisoara - Physicsde Gruyter

Published: Dec 1, 2020

Keywords: Cu; NiO; Thin films; Spain coater method; polycrystalline structure; Electrical conductivity

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