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References (35)
-
Ana Aizcorbe, Samuel Kortum (2005)
Moore's Law and the Semiconductor Industry: A Vintage ModelIO: Productivity
-
(2019)
The Physics of Semiconductor DevicesSpringer Proceedings in Physics
-
Aubry (1994)
Schottky diodes with high series resistance : limitations of forward I - V methods AubryVMeyerFSchottky diodes with high series resistance : limitations of forward I - V methodsApplAppl Phys Phys, 18
-
M. Kuikka, Wenjie Li, K. Kavanagh, Hua-Zhong Yu (2008)
Nanoscale Electrical and Structural Characterization of Gold/Alkyl Monolayer/Silicon Diode JunctionsJournal of Physical Chemistry C, 112
-
Esmaeilzadeh (2012)
Dark Silicon and the End of Multicore Scaling IEEE Computer Washington DC EsmaeilzadehHBlemEAmantRSSankaralingamKBurgerDDark Silicon and the End of Multicore Scaling IEEE Computer SocietyWashington DCSociety, 1
-
(2002)
Scaling of microfabricated nanometer-sized Schottky diodes. Microelectron -
M. Rezeq, M. Ismail (2012)
The significant effect of the size of a nano-metal particle on the interface with a semiconductor substrate2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)
-
H. Iwai (2011)
Future of nano CMOS technology2014 IEEE International Conference on Electron Devices and Solid-State Circuits
-
C. Nörenberg, S. Myhra, P. Dobson (2010)
Scanning probe microscopy studies on the growth of palladium and nickel on GaN(0001), 209
-
(2014)
Characterization of nano scale metal Schottky contacts with silicon substrates for scaling of electronic devices -
Smit (2002)
Scaling of micro - fabricated nanometer - sized Schottky diodes Microelectron SmitGJFlokstraMGRoggeSKlapwijkTMScaling of micro - fabricated nanometer - sized Schottky diodesMicroelectronEng Eng
-
Nörenberg (2010)
Scanning probe microscopy studies on the growth of palladium and nickel on GaN NörenbergCMyhraSDobsonPScanning probe microscopy studies on the growth of palladium and nickel on GaNPhys Conf Ser Sci Phys Conf Ser Sci, 24
-
G. Smit, S. Rogge, T. Klapwijk (2002)
Scaling of nano-Schottky-diodesApplied Physics Letters, 81
-
H. Esmaeilzadeh, Emily Blem, R. Amant, K. Sankaralingam, D. Burger (2012)
Dark Silicon and the End of Multicore ScalingIEEE Micro, 32
-
Junqiang Song, T. Ding, Juan Li, Q. Cai (2010)
Scanning tunneling microscope study of nanosized metal–semiconductor contacts between ErSi2 nanoislands and Si(0 0 1) substrateSurface Science, 604
-
G. Smit, S. Rogge, T. Klapwijk (2001)
Enhanced tunneling across nanometer-scale metal–semiconductor interfacesApplied Physics Letters, 80
-
M. Rezeq, K. Eledlebi, M. Ismail, Isra Lababidi (2013)
Analysis of the interface barriers between nano metal particles and semiconductors substrates2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS)
-
R. Hiesgen, M. Krause, D. Meissner (2000)
STM measurement of current-potential curves at a semiconductor surfaceElectrochimica Acta, 45
-
(1996)
MS contacts and Schottky diodes, field effect transistors – the J-Fet and MESFET -
Dhiraj (2014)
Ideal graphene / silicon Schottky junction diodes DhirajSJi UngLIdeal graphene / silicon Schottky junction diodesNano LettNano Lett, 14
-
Smit (2002)
Enhanced tunneling across nanometer - scale metal - semiconductor interfaces SmitGDJRoggeSKlapwijkTMEnhanced tunneling across nanometer - scale metal - semiconductor interfacesApplAppl Phys Lett Phys Lett
-
Rezeq (2014)
Characterization of nano Schottky junctions for a new structure of nano - electronic devices InIEEE Toronto Canada RezeqMEledlebiKIsmailMCharacterization of nano Schottky junctions for a new structure of nano - electronic devicesIEEE Nano Toronto CanadaNano, 13
-
Chunyan Wu, Zihan Zhang, Yiliang Wu, Peng Lv, Biao Nie, L. Luo, Li Wang, Jigang Hu, J. Jie (2013)
Flexible CuS nanotubes–ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirrorNanotechnology, 24
-
C. Auth (2012)
22-nm fully-depleted tri-gate CMOS transistorsProceedings of the IEEE 2012 Custom Integrated Circuits Conference
-
G. Vendelin, A. Pavio, U. Rohde (2006)
Principles of Semiconductor Devices - [Book Review]IEEE Circuits and Devices Magazine, 22
-
Smit (2002)
Scaling of nano - Schottky - diodes SmitGDJRoggeSKlapwijkTMScaling of nano - Schottky - diodesApplAppl Phys Lett Phys Lett
-
Kulkka (2008)
Nanoscale electrical and structural characterization of gold / alkyl monolayer / silicon diode junctions KulkkaMALiWKavanaghKLYuH - ZNanoscale electrical and structural characterization of gold / alkyl monolayer / silicon diode junctionsJJ Phys Chem Phys Chem, 23
-
S. Narendra, A. Chandrakasan (2010)
Leakage in Nanometer CMOS Technologies -
K. Eledlebi, M. Ismail, M. Rezeq (2014)
Numerical analysis of nano schottky junctions for developing novel sub-20 nm electronic devices2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
-
G. Smit, M. Flokstra, S. Rogge, T. Klapwijk (2002)
Scaling of micro-fabricated nanometer-sized Schottky diodesMicroelectronic Engineering, 64
-
M. Rezeq, K. Eledlebi, M. Ismail, B. Cui, R. Dey (2014)
Characterization of nano Schottky junctions for a new structure of nano-electronic devices14th IEEE International Conference on Nanotechnology
-
D. Sinha, J. Lee (2014)
Ideal graphene/silicon Schottky junction diodes.Nano letters, 14 8
-
Hiesgen (2000)
STM measurement of current - potential curves at a semiconductor surface Electrochim HiesgenRKrauseMMeissnerDSTM measurement of current - potential curves at a semiconductor surfaceElectrochim ActaActa
-
E. Rhoderick, A. Rothwarf (1979)
Metal–Semiconductor ContactsPhysics Today, 32
-
V. Aubry, F. Meyer (1994)
Schottky diodes with high series resistance: Limitations of forward I‐V methodsJournal of Applied Physics, 76
- Publisher
- de Gruyter
- Copyright
- Copyright © 2016 by the
- ISSN
- 2191-9089
- eISSN
- 2191-9097
- DOI
- 10.1515/ntrev-2015-0039
- Publisher site
- See Article on Publisher Site
Abstract
Abstract Nanometal-semiconductor contacts in the sub-20-nm range have shown some deviations in electrical characteristics compared to conventional diodes. We have used a finite element simulation software to build and analyze a proposed geometrical model. We used two different theoretical approaches to study the enhancements of the electric field at the interface, and then the total current across nano-Schottky junction. The results revealed a significant tunneling current at the reverse bias for low n-doped semiconductor substrates and low current at the forward bias. However, in the case of high n-doped semiconductor substrates, the thermionic current is significant at forward biases and the current is low at the reverse bias. We have used our finite element simulation models based on both approaches to fit the existing experimental data of nano-Schottky contacts.
Journal
Nanotechnology Reviews – de Gruyter
Published: Jun 1, 2016