Access the full text.
Sign up today, get DeepDyve free for 14 days.
Article 2, Pub. date: July 2015
N. Hossain, M. Chowdhury (2014)
Graphene and CNT based flash memory: Impacts of scaling control and tunnel oxide thickness2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)
Seyoung Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. Banerjee (2009)
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectricApplied Physics Letters, 94
Dragica Vasileska, Gerhard Klim, Tunneling
TechRep.
Nae-Man Park, Suk-Ho Choi, Seong-Ju (2002)
Park, 81
Jong Park, S. Song, J. Mun, B. Cho (2011)
Graphene gate electrode for MOS structure-based electronic devices.Nano letters, 11 12
Lewis Arco, Yi Zhang, Chongwu Zhou (2011)
Large Scale Graphene by Chemical Vapor Deposition: Synthesis, Characterization and Applications
Phaedon Avouris, Joerg Appenzeller, Richard Martel, Shalom J. Wind (2003)
Carbon nanotube electronicsProc. IEEE, 91
M. Lenzlinger, E. Snow (1968)
Fowler-Nordheim tunneling into thermally grown SiO 2IEEE Transactions on Electron Devices, 15
(2014)
Received July
Guangyu Zhang, Xinran Wang, Xiaolin Li, Yuerui Lu, Ali Javey, Dai Hongjie (2006)
Carbon nanotubes: from growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors, In Proceedings of the Electron Devices MeetingCarbon nanotubes: from growth
S. Lai (1998)
Tunnel Oxide and ETOXtm Flash Scaling Limitation
Pengzhen Cui, Sohyeon Seo, Junghyun Lee, Luyang Wang, Eunkyo Lee, Misook Min, Hyoyoung Lee (2011)
Nonvolatile memory device using gold nanoparticles covalently bound to reduced graphene oxide.ACS nano, 5 9
Sejoon Lee, E. Song, Sung Kim, D. Seo, S. Seo, T. Kang, Kang Wang (2012)
Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devicesApplied Physics Letters, 100
J. Maserjian, N. Zamani (1982)
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunnelingJournal of Applied Physics, 53
A. Hong, E. Song, H. Yu, M. Allen, Jiyoung Kim, J. Fowler, Jonathan Wassei, Youngju Park, Yong Wang, J. Zou, R. Kaner, B. Weiller, Kang Wang (2011)
Graphene flash memory.ACS nano, 5 10
J. Brewer, M. Gill (2007)
Nonvolatile memory technologies with emphasis on flash
P. Hasler (2005)
Floating-gate devices, circuits, and systemsFifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)
(2015)
Radiation hardness test of flash memory by threshold voltage analysis
E. Stützel, M. Burghard, K. Kern, Floriano Traversi, F. Nichele, R. Sordan (2010)
A graphene nanoribbon memory cell.Small, 6 24
Direct probing of 1/f noise origin with graphene multilayers: surface vs. volume
D. Farmer, Hsin-Ying Chiu, Yu-Ming Lin, K. Jenkins, F. Xia, P. Avouris (2009)
Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.Nano letters, 9 12
S. Hong, J. Kim, S. Kim, Sung‐Yool Choi, B. Cho (2010)
Flexible Resistive Switching Memory Device Based on Graphene OxideIEEE Electron Device Letters, 31
J. Brewer, M. Gill (2008)
Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using Flash Memory Devices
Yang Sui, Joerg Appenzeller (2009)
Multi-layer graphene field-effect transistors for improved device performanceProceedings of the Device Research Conference (DRC'09)
Y. Sui, J. Appenzeller (2009)
Multi-layer graphene field-effect transistors for improved device performance2009 Device Research Conference
Ye Zhou, Su‐Ting Han, P. Sonar, V. Roy (2013)
Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanismScientific Reports, 3
Tunneling. Tech. Rep., NANOHUB
M. Lenzlinger, E. Snow (1969)
Fowler‐Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 40
N. Yoneya, K. Tsukagoshi, Y. Aoyagi (2002)
Charge transfer control by gate voltage in crossed nanotube junctionApplied Physics Letters, 81
M. Hossain, M. Chowdhury, M. Islam, Tajmeri Akhter (2013)
Analysis of the properties of ZnO nanoparticle for emerging applications in nanoscale domains2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS)
Guangyu Zhang, Xinran Wang, Xiaolin Li, Yuerui Lu, A. Javey, H. Dai (2006)
Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/decade and Sub-60 mV/decade Tunnel Transistors2006 International Electron Devices Meeting
Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim (2010)
Transparent nano-floating gate memory on glassNanotechnology, 21
J. Maserjian (1974)
Tunneling in thin MOS structuresJournal of Vacuum Science and Technology, 11
Chowdhury
Haomin Wang, Yihong Wu, C. Cong, J. Shang, T. Yu (2010)
Hysteresis of electronic transport in graphene transistors.ACS nano, 4 12
H. Romero, N. Shen, P. Joshi, H. Gutiérrez, S. Tadigadapa, J. Sofo, P. Eklund (2008)
n-Type behavior of graphene supported on Si/SiO(2) substrates.ACS nano, 2 10
Shih-Hsien Lo, Douglas Buchanan, Y. Taur, W. Wang (1997)
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET'sIEEE Electron Device Letters, 18
Shih-Hung Tsai, J. Hung, N. Wang, J. Horng, M. Houng, Yeong-Her Wang (2003)
Oxide degradation mechanism in stacked-gate flash memory using the cell array stress testSemiconductor Science and Technology, 18
K. Fujimaru, R. Sasajima, H. Matsumura (1999)
Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channelJournal of Applied Physics, 85
A. Kolodny, Sidney Nieh, B. Eitan, Joseph Shappir (1986)
Analysis and modeling of floating-gate EEPROM cellsIEEE Transactions on Electron Devices, 33
M. Olmedo, Chuan Wang, K. Ryu, Huimei Zhou, Jingjian Ren, Ning Zhan, Chongwu Zhou, Jianlin Liu (2011)
Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes.ACS nano, 5 10
Young Lee, C. Kang, U. Jung, Jin Kim, H. Hwang, Hyun‐Jong Chung, S. Seo, R. Choi, B. Lee (2011)
Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristicsApplied Physics Letters, 98
Simone Bertolazzi, Daria Krasnozhon, A. Kis (2013)
Nonvolatile memory cells based on MoS2/graphene heterostructures.ACS nano, 7 4
Jian-Hao Chen, Chaun Jang, S. Xiao, Masa Ishigami, Michael Fuhrer (2008)
Intrinsic and extrinsic performance limits of graphene devices on SiO 2
P. Olivo, T. Nguyen, B. Riccò (1988)
High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 35
T. Ohta, A. Bostwick, J. McChesney, T. Seyller, K. Horn, E. Rotenberg (2006)
Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy.Physical review letters, 98 20
N. Hossain, Jitendra Koppu, M. Chowdhury (2015)
Analysis of radiation effect on the threshold voltage of flash memory device2015 IEEE International Symposium on Circuits and Systems (ISCAS)
P. Wallace (1947)
The Band Theory of GraphitePhysical Review, 71
Montek Singh, S. Nowick (2010)
ACM Journal on Emerging Technologies in Computing SystemsACM Trans. Design Autom. Electr. Syst., 16
Vachan Kumar, Shaloo Rakheja, Azad Naeemi (2011)
Modeling and optimization for multi-layer graphene nanoribbon conductorsProceedings of the IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM'11)
H. Jeong, Jong Kim, Jeong Kim, J. Hwang, Ji-eun Kim, J. Lee, T. Yoon, B. Cho, S. Kim, R. Ruoff, Sung‐Yool Choi (2010)
Graphene oxide thin films for flexible nonvolatile memory applications.Nano letters, 10 11
Min Choi, Gwan‐Hyoung Lee, Young‐Jun Yu, Daeyeong Lee, Seung Lee, P. Kim, J. Hone, Won Yoo (2013)
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devicesNature Communications, 4
J. Bai, Yu Huang (2010)
Fabrication and electrical properties of graphene nanoribbons, 70
Shuai Wang, J. Pu, D. Chan, B. Cho, K. Loh (2010)
Wide memory window in graphene oxide charge storage nodesApplied Physics Letters, 96
Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim (2010)
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible PlasticsNanoscale Research Letters, 6
N. Park, Sukyung Choi, Seong-Ju Park (2002)
Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitrideApplied Physics Letters, 81
V. Sangwan, V. Ballarotto, D. Hines, M. Fuhrer, E. Williams (2009)
Controlled growth, patterning and placement of carbon nanotube thin films2009 International Semiconductor Device Research Symposium
S. Bae, Hyeongkeun Kim, Youngbin Lee, Xiangfan Xu, Jae-Sung Park, Yi Zheng, Jayakumar Balakrishnan, T. Lei, Hyeoungkeun Kim, Y. Song, Young-Jin Kim, Kwang Kim, B. Ozyilmaz, Jong-Hyun Ahn, B. Hong, S. Iijima (2009)
Roll-to-roll production of 30-inch graphene films for transparent electrodes.Nature nanotechnology, 5 8
N. Hossain, M. Chowdhury (2014)
Multilayer graphene nanoribbon floating gate transistor for flash memory2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Thin dielectrics for MOS gate
Vachan Kumar, S. Rakheja, A. Naeemi (2011)
Modeling and optimization for multi-layer graphene nanoribbon conductors2011 IEEE International Interconnect Technology Conference
Y. Taur (2002)
CMOS design near the limit of scalingIbm Journal of Research and Development, 46
Xb Lu, J. Dai (2006)
Memory effects of carbon nanotubes as charge storage nodes for floating gate memory applicationsApplied Physics Letters, 88
I. Meric, Melinda Han, A. Young, B. Ozyilmaz, P. Kim, K. Shepard (2008)
Current saturation in zero-bandgap, top-gated graphene field-effect transistors.Nature nanotechnology, 3 11
P. McEuen, M. Fuhrer, Hongkun Park (2002)
Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 1
Jianhao Chen, C. Jang, S. Xiao, M. Ishigami, M. Fuhrer (2007)
Intrinsic and extrinsic performance limits of graphene devices on SiO2.Nature nanotechnology, 3 4
Nahid M. Hossain, Masud H. Chowdhury, Md (2013)
Jahidul Islam, and Tajmeri Selina Akhter
F. Schwierz (2010)
Graphene transistors.Nature nanotechnology, 5 7
(2012)
Carbon Nanotubes and Graphene for Data Processing
Melinda Han, B. Ozyilmaz, Yuanbo Zhang, P. Kim (2007)
Energy band-gap engineering of graphene nanoribbons.Physical review letters, 98 20
N. Hossain, Md Hossain, M. Chowdhury (2014)
Multilayer layer graphene nanoribbon flash memory: Analysis of programming and erasing operation2014 27th IEEE International System-on-Chip Conference (SOCC)
Shaowen Cao, Yingjie Zhu (2010)
Monodisperse α-Fe2O3 Mesoporous Microspheres: One-Step NaCl-Assisted Microwave-Solvothermal Preparation, Size Control and Photocatalytic PropertyNanoscale Research Letters, 6
Ning Zhan, M. Olmedo, Guoping Wang, Jianlin Liu (2011)
Graphene based nickel nanocrystal flash memoryApplied Physics Letters, 99
Xiangyu Chen, Kyeong-Jae Lee, D. Akinwande, G. Close, S. Yasuda, B. Paul, S. Fujita, J. Kong, H. Wong (2009)
High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz2009 IEEE International Electron Devices Meeting (IEDM)
Yong-Joo Doh, G. Yi (2010)
Nonvolatile memory devices based on few-layer graphene filmsNanotechnology, 21
P. Avouris, J. Appenzeller, R. Martel, S. Wind (2002)
Carbon nanotube electronicsDigest. International Electron Devices Meeting,
Floating gate transistor is the fundamental building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this article, we present a new floating gate transistor (FGT) design based on multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the proposed FGT, a MLGNR structure would be used as the channel of the field effect transistor (FET) and a layer of CNTs would be used as the floating gate. We have performed an analysis of the programming and erasing mechanism in the floating gate and its dependence on the applied control gate voltages. Based on our analysis we have observed that proposed graphene based floating gate transistor could be operated at a low voltage compared to conventional silicon based floating gate devices. We have presented detail analysis of the operation and the programming and erasing processes of the proposed FGT; the dependency of the programming and erasing current density on different parameters; and the impact of scaling the thicknesses of the control and tunneling oxides. To perform these analyses we have developed equivalent models for device capacitances.
ACM Journal on Emerging Technologies in Computing Systems (JETC) – Association for Computing Machinery
Published: Aug 3, 2015
Keywords: Graphene nanoribbon (GNR)
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.