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Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory WONIL CHOI, The Pennsylvania State University MOHAMMAD ARJOMAND, The Pennsylvania State University MYOUNGSOO JUNG, Yonsei University MAHMUT KANDEMIR, The Pennsylvania State University Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 104 ­105 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Proceedings of the ACM on Measurement and Analysis of Computing Systems Association for Computing Machinery

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

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Publisher
Association for Computing Machinery
Copyright
Copyright © 2017 by ACM Inc.
ISSN
2476-1249
DOI
10.1145/3084458
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Abstract

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory WONIL CHOI, The Pennsylvania State University MOHAMMAD ARJOMAND, The Pennsylvania State University MYOUNGSOO JUNG, Yonsei University MAHMUT KANDEMIR, The Pennsylvania State University Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 104 ­105 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data

Journal

Proceedings of the ACM on Measurement and Analysis of Computing Systems – Association for Computing Machinery

Published: Jun 13, 2017

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