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Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large... Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost- effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h-BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2”) production and utilise this h-BN as a protective layer for graphene towards integrated (opto-)electronic device fabrication. Keywords: hexagonal boron nitride, large crystal, monolayer, chemical vapor deposition, 2D materials, transfer, encapsulation 2,3 support material and encapsulant for graphene and an 1. Introduction increasing range of other 2D materials , as well as a barrier layer in van der Waals heterostructures . h-BN has also Hexagonal boron nitride (h-BN) is a well-known member attracted interest as an active material for infrared hyperbolic of the 2D family of materials, isostructural to graphene, but 6,7 metasurfaces and defect-induced sub-bandgap single photon with distinct properties. Due to its wide bandgap (~5.9 eV ) 8-11 emission at room temperature . and chemical inertness, h-BN has become indispensable as a xxxx-xxxx/xx/xxxxxx 1 © xxxx IOP Publishing Ltd Journal XX (XXXX) XXXXXX Author et al A major technological challenge is how to effectively processing has been investigated for h-BN, but only resulted 18,41 integrate h-BN in scalable process flows for these in marginal improvements . applications. Significant progress has been made in the Here, we focus on Fe catalysed CVD of monolayer h-BN. chemical vapour deposition (CVD) of h-BN from surface While the use of Fe is cost-effective, growth control to achieve 12,13 science studies in the nineties to targeted production of monolayer h-BN and large h-BN domain sizes has remained a high-quality h-BN layers on various catalytic transition challenge due to the solubility of both B and N in Fe . The 14-22 metals . Similar to graphene, such catalytic CVD has transfer of h-BN away from Fe is an additional challenge due become the dominant approach for producing large-area to the strong interaction , which is conversely why for continuous h-BN films and achieving h-BN crystal domain magnetic tunnel junctions the transfer-free integration of 16,17,22 43 sizes much larger than possible via exfoliation . For most h-BN on ferromagnetic Fe has been found so promising . We applications the critical challenges include scalable CVD employ commercial poly-crystalline Fe foils as a starting point process development to achieve high quality h-BN material at to systematically explore the role of bulk dissolved species, lowest cost, and to effectively and cleanly transfer the h-BN and find that a simple Fe oxidation and sequential away from the growth catalyst for device integration. In carburisation pre-growth step enable us to tailor a cost- analogy to graphene, the strength of the h-BN/metal effective, scalable CVD process to give mm-sized h-BN interactions can be used to guide the choice of the catalyst , domains, among the largest reported to date. Building on 23 24 whereby too strong an interaction as e.g. shown for Co , Ni previous literature on the use of water to facilitate graphene 25,26 44 or Rh brings significant challenges for subsequent h-BN transfer from Cu , we show that a thin interfacial Fe oxide transfer. A further widely used guideline to the choice of the can be created which subsequently can be selectively etched catalytic metal for monolayer h-BN growth is its bulk to enable a much easier h-BN transfer away from Fe. We solubility of the constituent elements, whereby high B and N demonstrate the quality of as-grown and transferred solubilities are considered deleterious leading to reservoir and monolayer h-BN by using it to protect graphene from damage precipitation effects upon cooling that are difficult to during remote plasma assisted atomic layer deposition 27 18,28-30 control . Based on these selection guidelines, Cu and (PEALD) and in creating Al O /h-BN/Gr heterostructures. 2 3 17,31 Pt are widely used for h-BN CVD (and also graphene for Graphene passivated with Al O /h-BN can withstand higher 2 3 the same reasons). Coincidentally, these catalysts are not as laser power densities compared to intrinsic graphene, effective for gaseous precursor dissociation thus requiring highlighting the promise of this approach for integrated high temperatures. Particularly for Cu this introduces (opto-)electronic device applications. problems due to its high vapour pressure and the need for 2. Methods operation close to its melting point; while the use of Pt carries higher costs in particular if it cannot be continuously reused 2.1 h-BN growth by CVD on Fe foils. due to degradation or contamination. Yet, previous literature also indicates that the dissolution of species into the catalyst Fe foils (Goodfellow, 0.1 mm, 99.8 % purity) were cleaned bulk can potentially offer an avenue for increased h-BN CVD in acetone and IPA and either utilised as such or oxidised at control, with, for instance, the bulk reservoir effect being 20 350 °C for 5 mins until the colour changed to brown. Such tunable via NH pre-treatment for cheaper Fe catalysts or foils are not the highest purity available but are a suitable interstitial C being reported to affect B and N adsorption on 34 choice towards industrially applicable low-cost substrates. For Co and Ni surfaces. The possible interdependent effects of instance, 99.99 % purity foils (Alfa Aesar, 0.1 mm) have intentionally or unintentionally adding (e.g. via contamination similar level of surface contamination as 99.8 % foils of catalyst or reactor) bulk dissolved species into the catalytic (Goodfellow, 0.1 mm; Supplementary Figure 1a,b), since the growth of 2D materials are often difficult to discern and thus stated purity only refers to the average bulk composition and remain poorly understood . Therefore, the dissolution of only considers metal content. The foils were then loaded into precursor species into the catalyst bulk remains more strongly a custom cold-wall CVD system with a SiC-coated (~40 µm) associated with loss rather than gain of growth control. graphite heater. It should be noted that the utilisation of However, in the case of graphene CVD, careful consideration uncoated graphite heaters leads to uncontrolled C of dissolution into the catalyst bulk has allowed monolayer contamination, which must be avoided to achieve reliable growth control to be extended to many high C solubility 36-38 process control. The system was then pumped to about catalysts . Recently, high temperature oxidative -5 39,40 1×10 mbar and filled with the required gas (Ar, NH3 or H2; annealing has emerged as a facile way to obtain large- -2 BOC research grade) at 1×10 mbar partial pressure. The domain graphene, with the vast majority of state-of-the-art temperature was then ramped to 980 °C (T ) or to the growth studies on mm-sized domains exploiting this method. To date, temperature as stated in the main text (950 °C or 1010 °C) at there is no equivalent simple catalyst conditioning method that 50 °C/min, followed by annealing in the set gas atmosphere consistently results in mm-sized h-BN domains. Oxidative (t ) for 20 mins. For the carburisation experiments, anneal Journal XX (XXXX) XXXXXX Author et al acetylene (BOC, research grade) was added in addition to the µm in spectroscopy mode, a cycle time of 100 µs, and an ion -3 + tested gas at a partial pressure of 3×10 mbar for 5 mins current of 0.1 pA. For sputtering, 10 keV Cs ions with a (t ). Borazine (Fluorochem, >97 %) was used as the h-BN current of 30 nA were employed. All ion beams are oriented C2H2 precursor and was controlled with a mass flow controller at 45° to the sample normal. The depth was approximately (MKS, metal seal) connected between the borazine bottle and estimated using the erosion rate (0.099 nm/s) calculated using the chamber. A borazine dose was added in addition to the the built-in software (SurfaceLab 7.0) calculator from the Fe tested gas, for example, 0.08 sccm for 20 mins. Different sputter yield and sputtering beam parameters (accelerating precursor flow rates (F ) and growth times (t ) were voltage, current and raster area). To compare the carbon level borazine growth used from 0.015 sccm to 0.54 sccm and from 5 mins to in the bulk of the foil samples, the ions from the first ~5 nm 4.5 hours respectively as described in the results section. The of the samples were excluded, in order to remove the partial pressure of borazine in our CVD system is contribution of adventitious hydrocarbons due to ambient approximately linearly related to its flow (sccm) as follows: exposure prior to measurement. This was determined by -3 -5 (8.7×10 )×F +(9×10 ) mbar. monitoring the removal of the CH ion signal during depth borazine profiling. 2.2 h-BN transfer For the analysis of representative iron oxide species, the - - - depth-dependent FeO (and similarly, the C , FeO and 2 2 To transfer CVD h-BN from Fe substrates the samples were FeO ) ion counts were normalised by the total ion count using oxidised in an environment with a high moisture level while point-by-point normalisation to allow direct comparison being heated to prevent water condensation and droplet between the samples. For the ToF-SIMS measurements the Fe formation that otherwise causes localized corrosion. A foil samples were removed from the CVD system while the diagram of the apparatus is shown in Supplementary Figure system was being vented in N and placed in a N -filled bag. 2 2 S2a. To control the level of humidity in the chamber, a water Before the ToF-SIMS measurement the samples were exposed bath was heated to 90 °C, while the h-BN/Fe samples were to air for <5 mins while loading into the system and pumping mounted on a glass cover with a secondary heater attached to to ultra-high vacuum. the back of the glass, set to a temperature of 120 °C. After such Optical images of h-BN on Fe were recorded after oxidising oxidation for 24 hours, the samples were spin-coated (1000 the Fe/h-BN samples at 350 °C on a hotplate, until the colour rpm) with poly(bisphenol-A-carbonate) (PC, 5 % in of Fe changed. Typically, the Fe surface acquired a brown chloroform), dried and floated on the surface of a 12 % colour, but depending on the Fe grain orientation and the level solution of hydrochloric acid. After a short time, the Fe foil of oxidation other colours could be obtained (e.g. blue). The detached from the floating polymer support and sunk, regions protected by h-BN oxidised more slowly and releasing the PC/h-BN stack. The stack was then transferred therefore had a different colour (e.g. light brown). Multilayer to three sequential baths with deionised water and picked up h-BN strongly protects Fe surface from oxidation and with the target substrate. SiO /Si substrates (300 nm) and therefore resulted in a bright white colour which can be easily graphene/copper samples were used as target substrates. The identified and distinguished from monolayer h-BN in the samples were then dried and the PC support was dissolved in optical images. Images were recorded on a Nikon Eclipse chloroform similarly to previously described methods . LV150N optical microscope with software enhanced contrast. Raman spectroscopy characterisation of monolayer h-BN 2.3 Characterisation. was performed on an inVia Renishaw system with a 532 nm Scanning electron microscopy (SEM) was performed on a laser, 100× objective and ~10 mW power. The background of Carl Zeiss Gemini 300 microscope with a 5 kV accelerating SiO /Si was subtracted, and a Lorentzian function was fitted voltage. to estimate the position and width of the E peak. Raman 2g Energy-dispersive X-ray spectroscopy (EDX) and mapping characterisation of graphene was performed at ~1 mW power, was performed on a Carl Zeiss Leo scanning electron whereby Voigt profiles were fitted to the D, G and 2D peaks. microscope with an Oxford Instruments EDX detector at Selected area electron diffraction patterns were recorded on 20 kV. a FEI Tecnai Osiris 80-200 transmission electron microscope Time-of-flight secondary-ion mass spectrometry (ToF- (TEM) at 80 kV accelerating voltage after transferring h-BN SIMS) measurement were performed using a ToF-SIMS IV to TEM grids. For these substrates, polymethyl methacrylate instrument (ION-TOF Gmbh, Germany) at a base pressure (PMMA, MicroChem A4, diluted 1:2 with anisole) was −9 <5×10 mbar. Each depth profile was acquired by analysing dropcast onto h-BN/Fe substrates and subsequently a 150 µm x 150 µm surface area (128 x 128 pixels, randomly delaminated using the electrochemical method . Quantifoil rastered) centred within a 400 µm x 400 µm sputtered region TEM grids (Agar Scientific) were used to pick up the in a non-interlaced mode (alternating data acquisition and PMMA/h-BN. The samples were dried and the PMMA was sputtering cycles). Analysis was carried out using 25 keV Bi 3 dissolved in acetone. ions from a liquid metal ion gun, with a spot size less than 5 Journal XX (XXXX) XXXXXX Author et al 2.4 Graphene heterostructure fabrication with h-BN and Al2O3 and A generalised CVD process flow used in this study is their characterisation. summarised in Figure 1a. Briefly, the Fe foils are either used pristine (after organic solvent cleaning) or purposely oxidised, Graphene was grown by CVD on Cu foils (Alfa Aesar, then annealed (T = 980 °C) in the chosen gas atmosphere growth 99.8 %, 25 µm) in a custom tube furnace system using (gas 1 for the annealing and gas 2 as the carrier gas for the 35,40 previously reported methods . Briefly, oxidised Cu foils growth) and borazine is introduced to nucleate and grow were loaded in the CVD system and annealed at 1070 °C in h-BN. After the growth stage, the sample is rapidly cooled 50 mbar Ar, followed by a Ar, H , CH gas mixture for the 2 4 (initial cooling rate of 200 °C/min). We first investigate the growth stage, with flow rates of 583 sccm, 17 sccm and 0.013 annealing effects on as-received Fe foils in vacuum or typical sccm respectively for 5 hours to obtain continuous graphene -2 CVD gases (1×10 mbar NH Ar or H gas 1 = gas 2) 3, 2; films with mm-sized domains. The PC/h-BN stack obtained combined with fixed, short borazine exposure times (t = growth using the moisture-assisted acid release method was 5 mins, t = 0 mins; Figure 1a) in order to reveal the C2H2 transferred directly to graphene/Cu, followed by etching of the nucleation behaviour of h-BN domains. Figure 1b (also Cu foil in 0.5 M ammonium persulfate solution. The resulting Supplementary Figures S3a-c) shows that such simple process PC/h-BN/graphene stack was transferred to three sequential in either NH , Ar, vacuum or H results in small (< 5 µm) 3 2 deionised water baths and picked up with the SiO /Si triangular h-BN domains with frequent multilayer patches or substrate. Similarly, for the graphene/SiO /Si samples, PC pyramids (light colour optically). The h-BN deposits in H was used to coat the graphene/Cu samples. The Cu substrate typically have higher pyramid coverage than in the other was etched and the sample was rinsed in deionised water, atmospheres, consistent with previous studies . We conclude followed by the pickup with the target substrate, drying, and that such a simple process does not provide sufficient growth the dissolution of PC in chloroform. control. Plasma enhanced atomic layer deposition (PEALD) was We explore next the controlled addition of carbon to Fe performed in an Oxford Instruments FlexAL system. 20 nm of foils via a short acetylene (C H ) exposure prior to the 2 2 alumina was deposited on the graphene/SiO /Si and borazine growth step (Figure 1a, gas 1 = gas 2, t = 5 mins, C2H2 h-BN/graphene/SiO /Si samples at 150 °C using t = 5 mins; Methods). Figure 1c shows that this short growth trimethylaluminium (TMA), oxygen plasma from a remote carburisation step leads to a significant increase in h-BN plasma source and water as precursors. Laser exposures to test domain size from around 5 µm (Figure 1b) to 25 µm with the the stability of graphene and its heterostructures were NH carrier gas and otherwise unchanged conditions. The performed on an InVia Renishaw system with a 532 nm laser, same effect of the C H step is observed for the other tested 2 2 ×100 objective, 100 % laser excitation (~50 mW) for 2 mins; gases (Ar, vacuum and H ; Supplementary Figures S3d-f 300 nm SiO /Si substrates were utilised. Before and after the respectively). The addition of carbon appears to enhance the exposure, Raman signatures of the graphene-containing effective h-BN layer growth rate and to increase the samples were collected at 1 mW laser excitation. monolayer fraction within a given h-BN island (Figure 1c). Yet, the carburisation step does not fully suppress multilayer 3. Results and discussion h-BN formation, unlike in previous reports on Co and Ni catalysed h-BN growth by molecular beam epitaxy with boron 3.1 Pre-growth conditioning of Fe foils towards large oxide and ammonia precursors . We attribute this effect to the monolayer h-BN domains partial filling of Fe foils with C that in turn reduces the boron 46-48 We focus on widely available, low-cost, standard purity and nitrogen solubilities, hinted at by previous studies . (99.8 %), polycrystalline Fe foils to demonstrate that our Such trends for the N solubility are presented in process is sufficiently contamination tolerant and does not Supplementary Figure S4, whereby by approaching the C require single crystal substrate preparation or excessive solubility limit in γ-Fe at 950 °C (~6.2 at% ), the N solubility metallurgical processing. To elucidate the causes of h-BN decreases by ~30 %. A similar reduction in B solubility is nucleation we first note an experimental observation whereby expected , likely resulting in a significant change to the h-BN domains preferentially nucleate at the rolling striations kinetic growth behaviour . Carbon, boron and nitrogen are all 46-51 of the as-received Fe foils (Supplementary Figure S1e). We well-known interstitial solute atoms for Fe , and therefore, find that the surface or near-surface contamination of Fe foils C, B and N solubilities will be interdependent considering the often comprises significant quantities of localised carbon quaternary C-B-N-Fe system. On the other hand, in the C-N- (Supplementary Figure S1a-d), which we suggest leads to the Fe system it was also shown that C and N atoms can reversibly observed preferential h-BN nucleation. It is therefore replace each other in the bulk . While the carburisation step necessary to consider methods for catalyst surface and near- is found to significantly affect the h-BN growth (Figure 1c), surface cleaning that would reduce the drastic effect of such this simple process flow still results in a relatively high h-BN embedded impurities. nucleation density and inhomogeneous growth, as highlighted Journal XX (XXXX) XXXXXX Author et al by a high fraction of multilayer deposits (Figures 1c; also monolayer h-BN coverage, likely due to its interference in the Supplementary Figures S3d-f). interplay between the bulk-dissolved species in Fe To identify new routes of h-BN growth control we (Supplementary Figure S3c,f,i). We converge on NH as gas 2 investigate oxidised Fe foils next (Methods) and optimise a to provide additional h-BN protection from oxidative gas suitable h-BN CVD process. Such oxidative processing is impurities (vs. Ar) and to mitigate excessive Fe evaporation widely used to remove carbonaceous impurities in metal (vs. vacuum). catalysts, for instance, to control the nucleation density of The developed method allows facile, rapid growth of large graphene for Cu catalysed CVD . This change introduces h-BN domains on the order of hundreds of micrometres in new complexity, but as we will show in the following lateral dimensions. We also confirm good uniformity by discussion, opens new pathways to h-BN growth control. growing h-BN domains on a 2” substrate and examining the When Ar is used as gas 1 and 2 in conjunction with oxidised domain size distribution (Supplementary Figure S6). The Fe foils, we find that the dose of borazine needs to be nucleation density and domain size are very consistent on this significantly increased (by an order of magnitude) to initialise substrate and allow the growth of uniform polycrystalline h-BN growth. We rationalise this observation by noting that films when the domains coalesce with extended growth times h-BN growth occurs on metallic Fe, and since the Fe surface (Supplementary Figure S7). In the following, we focus on this is not fully reduced in the Ar atmosphere in the given time, a narrower choice of process parameters as the framework for higher borazine exposure is required for the full surface further growth optimisation. conversion to metallic Fe in order to initiate h-BN growth. 3.2 Developing an understanding of oxidising and Under these conditions, it is difficult to control the growth and carburising catalyst conditioning as a result, very distorted, inhomogeneous domains are formed (Supplementary Figure S5a). When Ar is used as gas 1 but a For clarity in the following discussion, based on previous reducing NH atmosphere is used for gas 2, lower borazine 15,20,29,52,53 literature and our h-BN domain morphology pressure can be used again allowing us to obtain observations above we distinguish three potential pathways to geometrically-shaped predominantly monolayer h-BN h-BN domain formation from the precursor B, N species; these deposits (Supplementary Figure S5b). However, holes and are summarised schematically in Figure 2a. For a catalyst foil damage often occur for such conditions. This observation whose bulk is initially largely empty of dissolved B and N parallels with our previous studies of bulk oxygen effects for species, upon precursor exposure, the supply of B and N Cu catalysed graphene growth , where higher defect densities species to the surface is mediated by diffusion into the catalyst were confirmed with Raman spectroscopy and increased post- bulk. Once a sufficient supersaturation is developed at the growth etching in H . We find that the effect of Fe oxidation surface, large monolayer or the first layer of h-BN multilayers can be nullified (in terms of the h-BN material outcome) if a can form isothermally from surface-most precursor species prolonged reducing (NH ) atmosphere is used from the start arising from borazine decomposition – this route is (gas 1) or with the addition of a sufficient C H dose with a 2 2 particularly important for low solubility transition metal shorter NH annealing (Supplementary Figures S5c,d). catalysts (Figure 2b; ①; large dark monolayer h-BN domain). We systematically explored the various combinations of Isothermal growth of large additional h-BN layers underneath pre-growth Fe foil conditioning for the given process (Figure the first is facilitated by diffusion of species from the Fe 1a) and found that a balance between bulk O and C allows surface and sub-surface, especially in catalysts with high advantageous h-BN growth control. Remarkably, a specific Fe precursor solubilities, akin to a h-BN layer “intercalation". foil treatment process consisting of Fe oxidation, Ar annealing While the net flow of the precursor species is still to fill the (gas 1) and a short C H dose prior to growth achieves large 2 2 bulk of the foil with growth at the surface kinetically monolayer (> 100 µm) h-BN domains (Figure 1d with NH as stabilised , there is also lateral precursor diffusion to grow the gas 2; also Supplementary Figures S3g-i for Ar, vacuum and secondary layer which locally consumes the diffusing H respectively as gas 2). For all experiments, the borazine precursor. The concentration-driven, diffusive precursor exposure time was only 5 mins, giving an average growth rate supply via sub-surface or bulk has been directly confirmed for -1 of 30 µm min , one of the highest reported to date for a growth monolayer graphene for designed Cu-Ni alloy combinations temperature below 1000 °C. The described improvement in with different C solubilities by means of the C isotope growth outcome from Figure 1b to 1d is achieved by only labelling technique , and with ToF-SIMS measurements of targeted Fe foil conditioning prior to growth. Additionally, the 35,55 the bulk C level in Cu for graphene growth . These h-BN h-BN does not tend to nucleate along Fe striations suggesting layers (progressively lighter shade) look like triangular the removal of deleterious impurities (e.g. localised C) that pyramids and often have the same vertex, as shown in Figure otherwise would cause inhomogeneity. We find that the use of 2c. The solubilities of B and N in γ-Fe at 950 °C are around Ar as gas 1 is essential, while the choice of gas 2 is less critical. 56 46,57 49 0.11 at% and 0.10 at% (C solubility 6.2 at% ) However, H as gas 2 consistently gave worse results for respectively. These values are relatively high if put in Journal XX (XXXX) XXXXXX Author et al perspective with e.g. the C solubility in Cu of around the C counts increase again, while the oxygen level is 58 - 0.03 at% for graphene CVD at typical growth temperatures significantly lowered (Figure 3a, b, “C H treated”). The FeO 2 2 (~1030 °C). Even for this low precursor solubility catalytic counts of the oxygen-related profiles for the C H treated and 2 2 system there is a chance of isothermal bilayer or multilayer post-growth samples are close, within the noise level, 35,53,55 graphene growth unless precautions are taken . Another however, minute O differences can be determined from other pathway for h-BN growth is precipitation from the bulk upon oxide species. Supplementary Figure S9b shows that the FeO cooling due to the decreasing precursor solubility (Figure 2a). level in the sample after borazine exposure is slightly lower This process tends to result in aligned h-BN domains that are than after C H treatment, suggesting that some oxygen is 2 2 very small and thus have a noticeable dependence on the present during the growth and thus can potentially play an underlying grain structure of the metal catalyst as shown important role. Finally, the C profile after growth has lower schematically in Figure 2a. The alignment and shape can counts compared to the C H treated sample, but still 2 2 significantly change from one Fe grain to another. Hence, such sufficiently high to have an effect on h-BN growth. h-BN deposits can have distorted shapes dictated by the The ToF-SIMS data is consistent with the following catalyst grain orientation, and are small in typical CVD interpretation of the required balance of bulk C and O. The processes where the growth is rapidly quenched (Figure 2a,b; catalyst pre-growth oxidation minimises localised C surface ③). h-BN domains formed by precipitation do not typically contamination hence giving an improved homogeneity of h-BN nucleation, which does not follow the foil striations occur underneath the already-grown monolayer or multilayer h-BN under with our process conditions, likely due to the anymore. In terms of the choice of gas 1 (Figure 1a), the energy barrier associated with decoupling the existing utilisation of Ar is essential compared to reducing isothermally grown h-BN layer from the Fe surface upon rapid atmospheres (e.g. NH ) as it allows O diffusion into the bulk cooling. such that some level of O is retained. Further C impurity removal is thus achieved due to the scavenging effect of It is evident from our data (Figure 1) that pre-growth processing is of utmost importance, overshadowing the typical carbon by oxygen , which has been exploited for centuries in steelmaking, e.g. in the Bessemer process. Too high O bulk growth parameters (precursor pressure, temperature and time). In order to elucidate the effects of bulk dissolved species and concentration can cause etching effects (holes) in the growing consequently the reasons for the improved growth of h-BN on h-BN, distortion of its morphology, or require too much the conditioned Fe foils, we utilise depth-resolved time-of- precursor to reduce Fe and therefore results in irregular h-BN flight secondary-ion mass spectrometry (ToF-SIMS). For each deposits. Thus, by utilising C H to adjust the bulk O level 2 2 at a minute level and to fill the foil with C close to its solubility sample: as-received Fe, oxidised, Ar annealed, after C H 2 2 exposure in NH and after borazine exposure in NH we limit, thereby reducing the B and N solubilities, we suppress 3 3 analyse the negative ion intensity vs. the mass-to-charge ratio, the pathway of isothermal h-BN multilayer growth while m/z (Supplementary Figure S8a-e) and identify the FeO and obtaining additional control of the nucleation density. Indeed, - + C ions as prominent indicators of the dissolved oxygen and the reduction in the B ion count between O, C-treated and untreated foils can be seen from the ToF-SIMS depth profiles carbon. Figure 3a and b show the depth dependent profiles of these species (Methods), starting from the as-received foil and and a possible reduction in the NH ion counts is hinted as following each process step according to Figure 1a. We shown in Supplementary Figure S10a,b. Figure 3c emphasise that the ToF-SIMS measurements refer to a post schematically summarises our proposed mechanism of the growth state after a brief ambient exposure, although coaction of O and C species as to condition the bulk of the Fe foil to supress the pathway for B, N species to feed the growth precautions were taken to try to minimise air exposure (e.g. N packaging; Methods). During CVD the profiles are expected of h-BN multilayers via the bulk. to show a process- and time-dependent behaviour. The ToF- 3.3 CVD parameter optimisation for further SIMS data shows that compared to the as-received Fe foil the - enlargement of h-BN domains oxidised Fe foil has a significantly increased intensity of FeO species (note that the dip in the first 20 nm is due to the While the introduced simple foil conditioning procedure presence of a higher Fe oxide state, FeO Supplementary can easily give hundreds of micrometre monolayer h-BN Figure S9a). The C2 counts decrease within the first ~20 nm domain sizes (Figure 1a,d), we now focus on the CVD growth from the surface. After Ar annealing, we find that the oxygen- stage optimisation to achieve larger domain sizes. Currently, related profile partially levels out and while its overall counts h-BN domains of some hundreds of micrometres have been decrease compared to the oxidised sample (Figure 3a), the 16,17,19,34,60 demonstrated , but reaching the next order of remaining level of FeO is still very high. This behaviour is magnitude, beyond 1 mm, has proven difficult. Domain also linked to an overall significant reduction in the C counts “stitching” in h-BN has also been proposed as an alternative with depth (Figure 3b). In turn, following the steps of the 17,21,60 way to obtain large monocrystalline domains , however, developed CVD process, after the subsequent C H exposure, 2 2 possible B- or N- edge termination and random occurrence of Journal XX (XXXX) XXXXXX Author et al anti-parallel domain alignment mean that perfect “stitching” composition likely caused by the reduction of O and C 61,62 cannot be guaranteed . The occurrence of such defects has content. been confirmed by the observation of low angle domain Another well-known approach to achieve lower nucleation boundaries and overlapping domains with high resolution density for 2D material growth is to utilise higher growth 17,54,64 transmission electron and scanning tunnelling temperatures . Figure 5a shows the results for a CVD 61,63 microscopies . Hence, specifically here for h-BN, the process temperature (Figure 1a) of 1010 °C, whereby we also pathway of large crystal growth via a low nucleation density slightly lowered the borazine flow rate. The h-BN domain size approach has its merit. Additionally, the transfer methods need increases significantly with domain dimensions reaching to be developed specifically for defect-free h-BN domains, 1 mm even for a relatively short t of 45 mins. However, growth which is more challenging and will be discussed later in the at the same time, these h-BN domains show a high multilayer text. fraction, as highlighted in the optical images by the lighter Nucleation and growth require supersaturation; thus, one deposit in the h-BN domain centre. This observation is approach to suppress the nucleation density is to utilise lower consistent with our model introduced above, whereby the precursor flows to approach supersaturation more slowly. The diffusion of O and C is accelerated by temperature, thus the probability of new nucleation sites is thereby reduced, while species balance is rapidly changed, allowing the increased the growth is still possible, albeit at a slower rate. We lateral pathway of the B- and N- species through the bulk of investigate this strategy for the fixed growth temperature the catalyst, and hence the formation of multilayer h-BN (T ) of 980 °C (as in previous sections) by systematically growth sites underneath the existing first h-BN layer. With this growth lowering the precursor flow and increasing the synthesis time understanding, instead, we lowered the CVD process (t ) in conjunction with the developed pre-growth temperature to 950 °C, whereby the suitable bulk composition growth conditioning, so as to achieve partial coverage. We investigate of the Fe foil persists for longer, in favour of longer synthesis t values from 5 mins to 120 mins. A selection of the times (t = 4.5 hours) to supress the h-BN nucleation growth growth optical images of the resulting large-domain (~500 µm) fully- density using very low precursor flows (F = 0.01 sccm). borazine monolayer h-BN deposits are shown in Supplementary Figure 6b shows that under these conditions fully monolayer Figures S11a,b. There is a rapid decrease in the borazine flow h-BN domains form with dimensions up to 1.1 mm. rate required to obtain h-BN deposits vs. time, which becomes Notably, this optimised, lower temperature of 950 °C is less pronounced for longer times as shown in Figure 4a. Our well within standard quartzware operational regimes (< 1100 study here links to previous studies of the incubation time for °C) and is straightforward to implement in common CVD graphene nucleation, for example on Ni – a strongly reactors. We here focused on a simple CVD process flow interacting substrate with substantial C solubility. It was (Figure 1a) which can possibly be further optimised to achieve determined that the impingement flux of the precursor is faster processing times by utilising, for instance, a two-step inversely proportional to the incubation time squared . procedure, whereby a higher precursor “pulse” would rapidly Interestingly, if we apply such a fit to our data (Figure 4a, red trigger supersaturation and h-BN nucleation, followed by a curve), the behaviour does not match well for short times. It is lower precursor dose for domain expansion . as if the necessary flow of the precursor for short times is 3.4 Catalyst interface engineering for improved h-BN higher than predicted by the theory. This behaviour can be transferability again rationalised by the O etching effect due to its diffusion from the bulk of the Fe foil in our process. The additional For most applications scalable and clean transfer of the 2D precursor flow is necessary to compensate for the removal of layer away from the catalyst surface is required. This is a O. It is also evident that the effect becomes less pronounced significant challenge particularly as many catalytic metals that for longer synthesis times, suggesting that O gradually are very good growth substrates, such as Ni, Co and Fe, have depletes and has less of an effect. Figure 4b shows that there a strong interaction with h-BN and thus do not allow easy is a clear correlation between increased h-BN domain sizes h-BN layer removal. Such substrates typically require full wet and prolonged growth times, which is most pronounced for the 23,24 etching of the metal foil for h-BN transfer . Metal foil growth time up to one hour where the average domain size etching is well known to add contamination to the transferred increased from around 200 µm (5 mins) to 400 µm (60 mins); 2D layers . This contamination does not just come from the with maximum domain sizes of up to 600 µm (Supplementary catalyst metal itself but also from the release of Figure S11a,b). Beyond this time there is only a moderate species/contamination trapped in the bulk of the foil, e.g. Si- increase, suggesting that the bulk Fe foil composition is no 65,66 containing impurities . For our carburised Fe foils, we longer suitable for the suppression of new, secondary clearly observe that a porous “sponge” of carbon is formed nucleation. For extended experiments we also observe the after the foil is dissolved (Supplementary Figure S12a,b). This appearance of h-BN multilayer patches which is also observation is an indirect confirmation of the level of C bulk attributable to the time-dependent change in the foil dissolution, consistent with the growth model discussed Journal XX (XXXX) XXXXXX Author et al above. Previous work on h-BN growth on carburised Co and After transfer to 300 nm SiO /Si substrates there is a notable -1 Ni utilised full foil etching in order to release the h-BN layer, h-BN Raman peak with position of about 1371 cm and width -1 -1 however, the contamination issue was not discussed. Aside of 15 cm (13-17 cm range). The former value is blue-shifted -1 from environmental and economic considerations, clearly full from the bulk value (1365 cm ) and is typical for monolayer 17,70 foil etching is not an ideal transfer method, and especially not h-BN , while the low width value is comparable to 70 -1 when bulk dissolution of species is used to tune growth, as we exfoliated monolayer h-BN (typically 11-18 cm ) and the 17,34 -1 introduced above. Two alternative transfer techniques exists: highest quality CVD monolayer h-BN (13-16 cm ). We 67 17 bubbling transfer and dry peeling , but both often result in perform selected area electron diffraction (SAED) after macroscopic damage and tearing, especially for the strongly- transferring monolayer h-BN films consisting of 100-300 µm interacting catalysts. Depending on which metal catalyst is domains to TEM grids (Methods). Figure 7c shows SAED used, there are currently trade-offs for each method; patterns spanning a distance of 250 µm which do not show any specifically between scalability, cleanliness, cost and levels of rotation, confirming the crystallinity of such h-BN domains. defects introduced into the 2D layer . It should also be 3.5 Monolayer h-BN as graphene protection in emphasised that the larger in size and the better in crystal integrated manufacturing quality the 2D material domains are, the harder transfer may get with these non-destructive techniques . Our previous In order to highlight the quality and usability of as-grown work highlighted the challenges of h-BN transfer away from h-BN monolayer films and the introduced transfer process, we Fe, hence we seek here an improved transfer process matched here look at its use as an interfacial buffer layer between a to our catalyst and process flow (Figure 1a). monolayer graphene film and a commonly deposited The susceptibility of Fe to corrosion is well known, dielectric, Al O . We also adapt our methods to achieve a 2 3 especially in moist environments due to the formation of non- polymer-impurity free interface between h-BN and graphene passivating oxides . As much as this corrosion behaviour is 71,72 reported by previous studies . Here, the PC/h-BN stack is undesirable, e.g. in metallurgy, it turns out to be very useful to directly transferred to graphene/Cu and the resulting exploit for facile h-BN transfer. While previous works with PC/h-BN/graphene stack is delaminated (Methods). After in-situ X-ray photoelectron spectroscopy showed that a h-BN transferring the h-BN/graphene heterostructure onto SiO2/Si layer can temporarily protect Fe from oxidation in ambient substrates we then employ remote plasma enhanced atomic conditions for around a week, we find that in humid layer deposition (PEALD) to deposit a 20 nm thick Al O 2 3 environments h-BN does not provide a good protection. The layer. We investigate the effect of this deposition on graphene possibility of moisture penetration through the rust layer and h-BN/graphene as shown schematically in the insets of potentially allows to overcome the problem of the strong Figure 8a,b. Compared to thermal ALD, PEALD allows Fe/h-BN interaction. Figure 6 shows the schematic rationale deposition at lower temperatures, and potentially on plastic and results of this transfer approach. The key point as substrates, with wider precursor chemistries. Such processing highlighted in Figure 6a is that the Fe surface oxide is not self- thus opens integration routes with widely available plastic passivating in warm humid environments, i.e. the propagation substrates for flexible, transparent electronics, where the 2D of the surface oxide can partially proceed via the already- materials are utilised as active layers. The h-BN layer here is formed oxide. The processing steps are described in the crucial to protect the graphene layer from any damage during Methods section whereby a heated, controlled humidity the PEALD. Without h-BN the monolayer graphene region chamber was utilised (Supplementary Figure S2a). This (scan size 50 µm × 50 µm, Methods) shows a significant process indeed occurs as shown by the change in contrast increase in the Raman D:G ratio, from 2.5 % to 10 %, after (dark to light) in SEM (Figure 6b,c) and in colour (light grey PEALD at the given conditions (Figure 8a). While the intrinsic to brown) optically (Supplementary Figure S2b). Catalyst- defect density in our monolayer CVD graphene is very low, water oxidation was previously utilised for the Cu-graphene the damaging effect of PEALD could potentially be different system, albeit by submerging in water, rather than humidity if the intrinsic defect density is lowered even further, for control . After the oxidation and coating the Fe/h-BN example as in mechanically exfoliated graphene pieces . material with a temporary polymer support, the sample is Remarkably, a single layer of h-BN is able to protect graphene floated on the surface of an HCl solution (Methods). Fe oxides from such remote plasma damage, with no measurable change are etched much quicker (~minutes) than metallic Fe, in the D:G ratio before and after PEALD as seen from the therefore the surface oxide is rapidly and selectively removed histograms in Figure 8b. Also, the FWHM of the 2D peak or (Figure 6d). The h-BN/polymer layer spontaneously detaches other graphene characteristics were not significantly affected (Figure 6e,f), as demonstrated here for 2” substrates, and can (Supplementary Figures S13a-f), thus allowing us to create a be transferred to the target substrate. Figure 7 shows optical, high quality Al O /h-BN/graphene heterostructure. 2 3 Raman and selected area electron diffraction (SAED) Interestingly, we find that such Al O /h-BN/graphene 2 3 characterisation of as-transferred h-BN monolayer domains. heterostructures exhibit significantly improved stability under Journal XX (XXXX) XXXXXX Author et al laser excitation, compared to just unencapsulated 2D layers. improved stability under high power laser excitation paving Figure 8c compares pristine graphene, h-BN/graphene and the way for low-defect (opto-)electronic devices based on 2D Al O /h-BN/graphene all on SiO /Si (300 nm) substrates after materials. 2 3 2 exposure to very high laser power densities. A 20 mW laser, Acknowledgements 532 nm laser was utilised with a 100× objective with an -2 approximate power density of ~0.5 Wµm for 2 mins V.B., M.O., D.N. and S.H. acknowledge funding from the (Methods). Pristine high-quality monolayer graphene (~1 mm European Union’s Horizon 2020 research and innovation domain size, Methods) is predominantly destroyed, as program under grant agreement No number 785219. B.C. highlighted by the very high and broad D and G peaks with a acknowledges funding from the European Union’s Horizon ratio of 70% after the laser exposure (Figure 8c). The 2D peak 2020 research and innovation program under grant agreement is also significantly broadened. Monolayer-h-BN-protected No number 796388. J.A.-W. acknowledges the support of his graphene performed better, but still, a very high D peak Research Fellowship from the Royal Commission for the appeared (D:G ratio of 30 %), and broadening was observed Exhibition of 1851. R.S.W. acknowledges a EU Marie of the G and 2D peaks. In contrast, the Al O /h-BN/graphene 2 3 Skłodowska-Curie Individual Fellowship (Global) under grant sample did not show any significant degradation, with only a ARTIST (No. 656870) from the European Union’s Horizon minor increase in the D:G ratio (from 2.5 % to 3 %), while the 2020 research and innovation programme. Y. F., V.-P. V.-R., widths of the 2D and G peaks remained unchanged. We O.B. and S.H. acknowledge funding from EPSRC hypothesise that the thicker alumina layer is an excellent (EP/P005152/1, and Doctoral Training Award barrier to atmospheric gases, which supresses thermal- or EP/M508007/1). V.-P. V.-R. further acknowledges support photo-activated chemical damage to graphene under such high from NPL. B.B. and A.J.P. acknowledge funding from the laser power densities. It is thus evident that the h-BN U.K. Department of Business, Energy and Industrial Strategy monolayer enables defect-free graphene passivation with (NPL Project Number 121452). PEALD, which potentially can be expanded to other oxygen plasma-sensitive materials, such as organic films or ORCID iDs perovskites. Additionally, graphene passivated with alumina Vitaliy Babenko 0000-0001-5372-6487 and h-BN has enhanced resistance to high laser power Barry Brennan 0000-0002-5754-4100 densities, which is required in applications like mode-locked Barbara Canto 0000-0001-5885-9852 lasers, optical modulators or high power photodetectors. Robert Weatherup 0000-0002-3993-9045 4. Conclusions Stephan Hofmann 0000-0001-6375-1459 In this work we present a route for monolayer h-BN References utilisation towards applications – starting from the growth 1. Watanabe, K., Taniguchi, T. & Kanda, H. 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The growth time (t ) and growth temperature growth (T ) for (b-d) are 5 mins and 980 °C respectively. (a) The CVD process diagram showing that the Fe foil can be pristine or oxidised; can be growth annealed in different gas atmospheres and can be carburised with acetylene before h-BN growth with borazine. Optical images of the h-BN deposits after post-growth Fe oxidation are shown. Fe grains can be seen as background of different colours; lighter triangular shapes are monolayer h-BN and white deposits are multilayer pyramid-like h-BN deposits. (b) A NH based simple growth process on pristine Fe showing small triangular pyramid-like domains; additional growth results on pristine Fe foils for Ar, vacuum and H are shown in Supplementary Figure S3a-c (c) A NH based process with C H addition before h-BN synthesis on pristine Fe foils, resulting in larger lateral monolayer 3 2 2 deposits. Additional experiments for the Ar, vacuum and H based processes with C H are shown in Supplementary Figure S3d-f. (d) 2 2 2 Synthesis of large, fully monolayer h-BN domains on oxidised Fe foils with C H addition based on Ar annealing (gas 1) and NH carrier gas 2 2 3 (gas 2) during growth. Additional experiments on foils conditioned in such a way for Ar, vacuum and H are shown in Supplementary Figure S3g-i. Journal XX (XXXX) XXXXXX Author et al Figure 2. An outline of h-BN growth routes on iron. (a) A schematic diagram of the paths of B, N- species to h-BN growth sites: (1) isothermal growth of the top domain from surface species, (2) isothermal growth of large secondary layers via layer “intercalation” with species diffusing through the bulk/near-surface resulting in an inverted pyramidal shape; (3) growth by precipitation from the bulk on cooling resulting in small h-BN domains that are often aligned or have disturbed but consistent shape within a specific Fe grain. Such domains do not appear underneath the isothermally-grown layers or full coverage films. (b-c) SEM images of a monolayer regions and a multilayer pyramid illustrating exemplar domains grown via paths 1-3. Journal XX (XXXX) XXXXXX Author et al Figure 3. Fe foil composition analysis close to the surface for h-BN growth. (a-b) ToF-SIMS measurements of oxygen and carbon levels in the - - Fe foil, represented by FeO and C intensities normalised to total ion counts (Methods), at different stages of the synthesis process: (1) as- received foil contains some O and C; (2) Fe foil oxidation leads to the removal of most of the C within the first 20 nm of the surface and a significant increase in surface O; (3) Ar annealing of the oxidised sample causes a reduction in the O intensity, while decreasing the level of C in the foil; (4) after C H dosing, there is a significant decrease in the O level and an increase in the bulk C level; (5) after the growth of 2 2 h-BN domains a small further decrease in the already low iron oxide level can be measured (Supplementary Figure S9), and additionally the level of C is decreased, suggesting its role in the h-BN growth in pre-filling the bulk. (c) A schematic diagram showing that the isothermal secondary layer growth process is suppressed with the presence of oxygen and carbon in the bulk of the Fe foil leading to monolayer-only growth and suppressed nucleation density. Journal XX (XXXX) XXXXXX Author et al Figure 4. h-BN growth optimisation for combinations of precursor flow and growth times (t ) for a fixed temperature of T = 980 °C. growth growth (a) Borazine flow rate needed for a specific growth time to obtain separated h-BN domains; showing a rapid decrease. The red solid line is the inverse quadratic fit expected for the pristine metal catalyst to reach supersaturation, fitted to the points for t > 60 mins. The growth dashed line is a guide to the eye. (b) Triangular h-BN domain sizes (mean, maximum and 1 s.d. error bars are plotted) corresponding to the t times from (a). growth Journal XX (XXXX) XXXXXX Author et al Figure 5. Optical images of ultra-large h-BN domains after Fe foil oxidation. (a) A h-BN domain grown at increased temperature (1010 °C) showing a large monolayer domain and patches of multilayer (white). (b) A h-BN domain grown at a reduced temperature (950 °C), but increased time showing a fully monolayer domain. Journal XX (XXXX) XXXXXX Author et al Figure 6. Tailored transfer of h-BN from Fe foils. (a) A diagram of oxidation of Fe underneath h-BN films via non-passivating iron oxides in humid environments. SEM images of the surface using the InLens detector showing (b) unoxidised foils with h-BN immediately after growth; (c) partially oxidized surface with oxidation in a controlled-humidity apparatus (Supplementary Figure S2a). An optical image also showing a colour change is presented in Supplementary Figure S2b. (d) A diagram of HCl etching of the thin surface iron oxides leading to PC/h-BN delamination. Optical images of the PC/h-BN/Fe samples (e) during and (f) after HCl delamination. Journal XX (XXXX) XXXXXX Author et al Figure 7. h-BN material characterisation. (a) An optical image showing exemplar transferred monolayer h-BN domains, (b) Raman signal -1 -1 after subtracting the SiO /Si background showing the E peak position at 1371 cm with FWHM of around 15 cm , (c) SAED TEM analysis 2 2g of a h-BN domain spanning a distance of 250 µm without changes in the diffraction pattern. Journal XX (XXXX) XXXXXX Author et al Figure 8. Raman spectroscopy characterisation of graphene with h-BN and PEALD alumina. (a) The D:G ratio histograms of graphene transferred to Si/SiO substrates before and after PEALD of alumina showing a significant increase in the ratio and therefore the defect density in graphene due to the plasma induced damage. (b) The D:G ratio histograms of h-BN/Gr before and after PEALD of alumina showing no change in the ratio and therefore unchanged defect density. (c) Raman spectra of graphene exposed to high laser power densities for 2 mins (100× objective) showing that pristine graphene is significantly damaged after the exposure. While h-BN provided some protection, a significant D peak emerged and the 2D and G peaks broadened. Notably, alumina encapsulated graphene, enabled by h-BN protection, did not show a significant change in the spectrum after such laser exposure. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Condensed Matter arXiv (Cornell University)

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

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2053-1583
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10.1088/2053-1583/ab6269
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Abstract

Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost- effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h-BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2”) production and utilise this h-BN as a protective layer for graphene towards integrated (opto-)electronic device fabrication. Keywords: hexagonal boron nitride, large crystal, monolayer, chemical vapor deposition, 2D materials, transfer, encapsulation 2,3 support material and encapsulant for graphene and an 1. Introduction increasing range of other 2D materials , as well as a barrier layer in van der Waals heterostructures . h-BN has also Hexagonal boron nitride (h-BN) is a well-known member attracted interest as an active material for infrared hyperbolic of the 2D family of materials, isostructural to graphene, but 6,7 metasurfaces and defect-induced sub-bandgap single photon with distinct properties. Due to its wide bandgap (~5.9 eV ) 8-11 emission at room temperature . and chemical inertness, h-BN has become indispensable as a xxxx-xxxx/xx/xxxxxx 1 © xxxx IOP Publishing Ltd Journal XX (XXXX) XXXXXX Author et al A major technological challenge is how to effectively processing has been investigated for h-BN, but only resulted 18,41 integrate h-BN in scalable process flows for these in marginal improvements . applications. Significant progress has been made in the Here, we focus on Fe catalysed CVD of monolayer h-BN. chemical vapour deposition (CVD) of h-BN from surface While the use of Fe is cost-effective, growth control to achieve 12,13 science studies in the nineties to targeted production of monolayer h-BN and large h-BN domain sizes has remained a high-quality h-BN layers on various catalytic transition challenge due to the solubility of both B and N in Fe . The 14-22 metals . Similar to graphene, such catalytic CVD has transfer of h-BN away from Fe is an additional challenge due become the dominant approach for producing large-area to the strong interaction , which is conversely why for continuous h-BN films and achieving h-BN crystal domain magnetic tunnel junctions the transfer-free integration of 16,17,22 43 sizes much larger than possible via exfoliation . For most h-BN on ferromagnetic Fe has been found so promising . We applications the critical challenges include scalable CVD employ commercial poly-crystalline Fe foils as a starting point process development to achieve high quality h-BN material at to systematically explore the role of bulk dissolved species, lowest cost, and to effectively and cleanly transfer the h-BN and find that a simple Fe oxidation and sequential away from the growth catalyst for device integration. In carburisation pre-growth step enable us to tailor a cost- analogy to graphene, the strength of the h-BN/metal effective, scalable CVD process to give mm-sized h-BN interactions can be used to guide the choice of the catalyst , domains, among the largest reported to date. Building on 23 24 whereby too strong an interaction as e.g. shown for Co , Ni previous literature on the use of water to facilitate graphene 25,26 44 or Rh brings significant challenges for subsequent h-BN transfer from Cu , we show that a thin interfacial Fe oxide transfer. A further widely used guideline to the choice of the can be created which subsequently can be selectively etched catalytic metal for monolayer h-BN growth is its bulk to enable a much easier h-BN transfer away from Fe. We solubility of the constituent elements, whereby high B and N demonstrate the quality of as-grown and transferred solubilities are considered deleterious leading to reservoir and monolayer h-BN by using it to protect graphene from damage precipitation effects upon cooling that are difficult to during remote plasma assisted atomic layer deposition 27 18,28-30 control . Based on these selection guidelines, Cu and (PEALD) and in creating Al O /h-BN/Gr heterostructures. 2 3 17,31 Pt are widely used for h-BN CVD (and also graphene for Graphene passivated with Al O /h-BN can withstand higher 2 3 the same reasons). Coincidentally, these catalysts are not as laser power densities compared to intrinsic graphene, effective for gaseous precursor dissociation thus requiring highlighting the promise of this approach for integrated high temperatures. Particularly for Cu this introduces (opto-)electronic device applications. problems due to its high vapour pressure and the need for 2. Methods operation close to its melting point; while the use of Pt carries higher costs in particular if it cannot be continuously reused 2.1 h-BN growth by CVD on Fe foils. due to degradation or contamination. Yet, previous literature also indicates that the dissolution of species into the catalyst Fe foils (Goodfellow, 0.1 mm, 99.8 % purity) were cleaned bulk can potentially offer an avenue for increased h-BN CVD in acetone and IPA and either utilised as such or oxidised at control, with, for instance, the bulk reservoir effect being 20 350 °C for 5 mins until the colour changed to brown. Such tunable via NH pre-treatment for cheaper Fe catalysts or foils are not the highest purity available but are a suitable interstitial C being reported to affect B and N adsorption on 34 choice towards industrially applicable low-cost substrates. For Co and Ni surfaces. The possible interdependent effects of instance, 99.99 % purity foils (Alfa Aesar, 0.1 mm) have intentionally or unintentionally adding (e.g. via contamination similar level of surface contamination as 99.8 % foils of catalyst or reactor) bulk dissolved species into the catalytic (Goodfellow, 0.1 mm; Supplementary Figure 1a,b), since the growth of 2D materials are often difficult to discern and thus stated purity only refers to the average bulk composition and remain poorly understood . Therefore, the dissolution of only considers metal content. The foils were then loaded into precursor species into the catalyst bulk remains more strongly a custom cold-wall CVD system with a SiC-coated (~40 µm) associated with loss rather than gain of growth control. graphite heater. It should be noted that the utilisation of However, in the case of graphene CVD, careful consideration uncoated graphite heaters leads to uncontrolled C of dissolution into the catalyst bulk has allowed monolayer contamination, which must be avoided to achieve reliable growth control to be extended to many high C solubility 36-38 process control. The system was then pumped to about catalysts . Recently, high temperature oxidative -5 39,40 1×10 mbar and filled with the required gas (Ar, NH3 or H2; annealing has emerged as a facile way to obtain large- -2 BOC research grade) at 1×10 mbar partial pressure. The domain graphene, with the vast majority of state-of-the-art temperature was then ramped to 980 °C (T ) or to the growth studies on mm-sized domains exploiting this method. To date, temperature as stated in the main text (950 °C or 1010 °C) at there is no equivalent simple catalyst conditioning method that 50 °C/min, followed by annealing in the set gas atmosphere consistently results in mm-sized h-BN domains. Oxidative (t ) for 20 mins. For the carburisation experiments, anneal Journal XX (XXXX) XXXXXX Author et al acetylene (BOC, research grade) was added in addition to the µm in spectroscopy mode, a cycle time of 100 µs, and an ion -3 + tested gas at a partial pressure of 3×10 mbar for 5 mins current of 0.1 pA. For sputtering, 10 keV Cs ions with a (t ). Borazine (Fluorochem, >97 %) was used as the h-BN current of 30 nA were employed. All ion beams are oriented C2H2 precursor and was controlled with a mass flow controller at 45° to the sample normal. The depth was approximately (MKS, metal seal) connected between the borazine bottle and estimated using the erosion rate (0.099 nm/s) calculated using the chamber. A borazine dose was added in addition to the the built-in software (SurfaceLab 7.0) calculator from the Fe tested gas, for example, 0.08 sccm for 20 mins. Different sputter yield and sputtering beam parameters (accelerating precursor flow rates (F ) and growth times (t ) were voltage, current and raster area). To compare the carbon level borazine growth used from 0.015 sccm to 0.54 sccm and from 5 mins to in the bulk of the foil samples, the ions from the first ~5 nm 4.5 hours respectively as described in the results section. The of the samples were excluded, in order to remove the partial pressure of borazine in our CVD system is contribution of adventitious hydrocarbons due to ambient approximately linearly related to its flow (sccm) as follows: exposure prior to measurement. This was determined by -3 -5 (8.7×10 )×F +(9×10 ) mbar. monitoring the removal of the CH ion signal during depth borazine profiling. 2.2 h-BN transfer For the analysis of representative iron oxide species, the - - - depth-dependent FeO (and similarly, the C , FeO and 2 2 To transfer CVD h-BN from Fe substrates the samples were FeO ) ion counts were normalised by the total ion count using oxidised in an environment with a high moisture level while point-by-point normalisation to allow direct comparison being heated to prevent water condensation and droplet between the samples. For the ToF-SIMS measurements the Fe formation that otherwise causes localized corrosion. A foil samples were removed from the CVD system while the diagram of the apparatus is shown in Supplementary Figure system was being vented in N and placed in a N -filled bag. 2 2 S2a. To control the level of humidity in the chamber, a water Before the ToF-SIMS measurement the samples were exposed bath was heated to 90 °C, while the h-BN/Fe samples were to air for <5 mins while loading into the system and pumping mounted on a glass cover with a secondary heater attached to to ultra-high vacuum. the back of the glass, set to a temperature of 120 °C. After such Optical images of h-BN on Fe were recorded after oxidising oxidation for 24 hours, the samples were spin-coated (1000 the Fe/h-BN samples at 350 °C on a hotplate, until the colour rpm) with poly(bisphenol-A-carbonate) (PC, 5 % in of Fe changed. Typically, the Fe surface acquired a brown chloroform), dried and floated on the surface of a 12 % colour, but depending on the Fe grain orientation and the level solution of hydrochloric acid. After a short time, the Fe foil of oxidation other colours could be obtained (e.g. blue). The detached from the floating polymer support and sunk, regions protected by h-BN oxidised more slowly and releasing the PC/h-BN stack. The stack was then transferred therefore had a different colour (e.g. light brown). Multilayer to three sequential baths with deionised water and picked up h-BN strongly protects Fe surface from oxidation and with the target substrate. SiO /Si substrates (300 nm) and therefore resulted in a bright white colour which can be easily graphene/copper samples were used as target substrates. The identified and distinguished from monolayer h-BN in the samples were then dried and the PC support was dissolved in optical images. Images were recorded on a Nikon Eclipse chloroform similarly to previously described methods . LV150N optical microscope with software enhanced contrast. Raman spectroscopy characterisation of monolayer h-BN 2.3 Characterisation. was performed on an inVia Renishaw system with a 532 nm Scanning electron microscopy (SEM) was performed on a laser, 100× objective and ~10 mW power. The background of Carl Zeiss Gemini 300 microscope with a 5 kV accelerating SiO /Si was subtracted, and a Lorentzian function was fitted voltage. to estimate the position and width of the E peak. Raman 2g Energy-dispersive X-ray spectroscopy (EDX) and mapping characterisation of graphene was performed at ~1 mW power, was performed on a Carl Zeiss Leo scanning electron whereby Voigt profiles were fitted to the D, G and 2D peaks. microscope with an Oxford Instruments EDX detector at Selected area electron diffraction patterns were recorded on 20 kV. a FEI Tecnai Osiris 80-200 transmission electron microscope Time-of-flight secondary-ion mass spectrometry (ToF- (TEM) at 80 kV accelerating voltage after transferring h-BN SIMS) measurement were performed using a ToF-SIMS IV to TEM grids. For these substrates, polymethyl methacrylate instrument (ION-TOF Gmbh, Germany) at a base pressure (PMMA, MicroChem A4, diluted 1:2 with anisole) was −9 <5×10 mbar. Each depth profile was acquired by analysing dropcast onto h-BN/Fe substrates and subsequently a 150 µm x 150 µm surface area (128 x 128 pixels, randomly delaminated using the electrochemical method . Quantifoil rastered) centred within a 400 µm x 400 µm sputtered region TEM grids (Agar Scientific) were used to pick up the in a non-interlaced mode (alternating data acquisition and PMMA/h-BN. The samples were dried and the PMMA was sputtering cycles). Analysis was carried out using 25 keV Bi 3 dissolved in acetone. ions from a liquid metal ion gun, with a spot size less than 5 Journal XX (XXXX) XXXXXX Author et al 2.4 Graphene heterostructure fabrication with h-BN and Al2O3 and A generalised CVD process flow used in this study is their characterisation. summarised in Figure 1a. Briefly, the Fe foils are either used pristine (after organic solvent cleaning) or purposely oxidised, Graphene was grown by CVD on Cu foils (Alfa Aesar, then annealed (T = 980 °C) in the chosen gas atmosphere growth 99.8 %, 25 µm) in a custom tube furnace system using (gas 1 for the annealing and gas 2 as the carrier gas for the 35,40 previously reported methods . Briefly, oxidised Cu foils growth) and borazine is introduced to nucleate and grow were loaded in the CVD system and annealed at 1070 °C in h-BN. After the growth stage, the sample is rapidly cooled 50 mbar Ar, followed by a Ar, H , CH gas mixture for the 2 4 (initial cooling rate of 200 °C/min). We first investigate the growth stage, with flow rates of 583 sccm, 17 sccm and 0.013 annealing effects on as-received Fe foils in vacuum or typical sccm respectively for 5 hours to obtain continuous graphene -2 CVD gases (1×10 mbar NH Ar or H gas 1 = gas 2) 3, 2; films with mm-sized domains. The PC/h-BN stack obtained combined with fixed, short borazine exposure times (t = growth using the moisture-assisted acid release method was 5 mins, t = 0 mins; Figure 1a) in order to reveal the C2H2 transferred directly to graphene/Cu, followed by etching of the nucleation behaviour of h-BN domains. Figure 1b (also Cu foil in 0.5 M ammonium persulfate solution. The resulting Supplementary Figures S3a-c) shows that such simple process PC/h-BN/graphene stack was transferred to three sequential in either NH , Ar, vacuum or H results in small (< 5 µm) 3 2 deionised water baths and picked up with the SiO /Si triangular h-BN domains with frequent multilayer patches or substrate. Similarly, for the graphene/SiO /Si samples, PC pyramids (light colour optically). The h-BN deposits in H was used to coat the graphene/Cu samples. The Cu substrate typically have higher pyramid coverage than in the other was etched and the sample was rinsed in deionised water, atmospheres, consistent with previous studies . We conclude followed by the pickup with the target substrate, drying, and that such a simple process does not provide sufficient growth the dissolution of PC in chloroform. control. Plasma enhanced atomic layer deposition (PEALD) was We explore next the controlled addition of carbon to Fe performed in an Oxford Instruments FlexAL system. 20 nm of foils via a short acetylene (C H ) exposure prior to the 2 2 alumina was deposited on the graphene/SiO /Si and borazine growth step (Figure 1a, gas 1 = gas 2, t = 5 mins, C2H2 h-BN/graphene/SiO /Si samples at 150 °C using t = 5 mins; Methods). Figure 1c shows that this short growth trimethylaluminium (TMA), oxygen plasma from a remote carburisation step leads to a significant increase in h-BN plasma source and water as precursors. Laser exposures to test domain size from around 5 µm (Figure 1b) to 25 µm with the the stability of graphene and its heterostructures were NH carrier gas and otherwise unchanged conditions. The performed on an InVia Renishaw system with a 532 nm laser, same effect of the C H step is observed for the other tested 2 2 ×100 objective, 100 % laser excitation (~50 mW) for 2 mins; gases (Ar, vacuum and H ; Supplementary Figures S3d-f 300 nm SiO /Si substrates were utilised. Before and after the respectively). The addition of carbon appears to enhance the exposure, Raman signatures of the graphene-containing effective h-BN layer growth rate and to increase the samples were collected at 1 mW laser excitation. monolayer fraction within a given h-BN island (Figure 1c). Yet, the carburisation step does not fully suppress multilayer 3. Results and discussion h-BN formation, unlike in previous reports on Co and Ni catalysed h-BN growth by molecular beam epitaxy with boron 3.1 Pre-growth conditioning of Fe foils towards large oxide and ammonia precursors . We attribute this effect to the monolayer h-BN domains partial filling of Fe foils with C that in turn reduces the boron 46-48 We focus on widely available, low-cost, standard purity and nitrogen solubilities, hinted at by previous studies . (99.8 %), polycrystalline Fe foils to demonstrate that our Such trends for the N solubility are presented in process is sufficiently contamination tolerant and does not Supplementary Figure S4, whereby by approaching the C require single crystal substrate preparation or excessive solubility limit in γ-Fe at 950 °C (~6.2 at% ), the N solubility metallurgical processing. To elucidate the causes of h-BN decreases by ~30 %. A similar reduction in B solubility is nucleation we first note an experimental observation whereby expected , likely resulting in a significant change to the h-BN domains preferentially nucleate at the rolling striations kinetic growth behaviour . Carbon, boron and nitrogen are all 46-51 of the as-received Fe foils (Supplementary Figure S1e). We well-known interstitial solute atoms for Fe , and therefore, find that the surface or near-surface contamination of Fe foils C, B and N solubilities will be interdependent considering the often comprises significant quantities of localised carbon quaternary C-B-N-Fe system. On the other hand, in the C-N- (Supplementary Figure S1a-d), which we suggest leads to the Fe system it was also shown that C and N atoms can reversibly observed preferential h-BN nucleation. It is therefore replace each other in the bulk . While the carburisation step necessary to consider methods for catalyst surface and near- is found to significantly affect the h-BN growth (Figure 1c), surface cleaning that would reduce the drastic effect of such this simple process flow still results in a relatively high h-BN embedded impurities. nucleation density and inhomogeneous growth, as highlighted Journal XX (XXXX) XXXXXX Author et al by a high fraction of multilayer deposits (Figures 1c; also monolayer h-BN coverage, likely due to its interference in the Supplementary Figures S3d-f). interplay between the bulk-dissolved species in Fe To identify new routes of h-BN growth control we (Supplementary Figure S3c,f,i). We converge on NH as gas 2 investigate oxidised Fe foils next (Methods) and optimise a to provide additional h-BN protection from oxidative gas suitable h-BN CVD process. Such oxidative processing is impurities (vs. Ar) and to mitigate excessive Fe evaporation widely used to remove carbonaceous impurities in metal (vs. vacuum). catalysts, for instance, to control the nucleation density of The developed method allows facile, rapid growth of large graphene for Cu catalysed CVD . This change introduces h-BN domains on the order of hundreds of micrometres in new complexity, but as we will show in the following lateral dimensions. We also confirm good uniformity by discussion, opens new pathways to h-BN growth control. growing h-BN domains on a 2” substrate and examining the When Ar is used as gas 1 and 2 in conjunction with oxidised domain size distribution (Supplementary Figure S6). The Fe foils, we find that the dose of borazine needs to be nucleation density and domain size are very consistent on this significantly increased (by an order of magnitude) to initialise substrate and allow the growth of uniform polycrystalline h-BN growth. We rationalise this observation by noting that films when the domains coalesce with extended growth times h-BN growth occurs on metallic Fe, and since the Fe surface (Supplementary Figure S7). In the following, we focus on this is not fully reduced in the Ar atmosphere in the given time, a narrower choice of process parameters as the framework for higher borazine exposure is required for the full surface further growth optimisation. conversion to metallic Fe in order to initiate h-BN growth. 3.2 Developing an understanding of oxidising and Under these conditions, it is difficult to control the growth and carburising catalyst conditioning as a result, very distorted, inhomogeneous domains are formed (Supplementary Figure S5a). When Ar is used as gas 1 but a For clarity in the following discussion, based on previous reducing NH atmosphere is used for gas 2, lower borazine 15,20,29,52,53 literature and our h-BN domain morphology pressure can be used again allowing us to obtain observations above we distinguish three potential pathways to geometrically-shaped predominantly monolayer h-BN h-BN domain formation from the precursor B, N species; these deposits (Supplementary Figure S5b). However, holes and are summarised schematically in Figure 2a. For a catalyst foil damage often occur for such conditions. This observation whose bulk is initially largely empty of dissolved B and N parallels with our previous studies of bulk oxygen effects for species, upon precursor exposure, the supply of B and N Cu catalysed graphene growth , where higher defect densities species to the surface is mediated by diffusion into the catalyst were confirmed with Raman spectroscopy and increased post- bulk. Once a sufficient supersaturation is developed at the growth etching in H . We find that the effect of Fe oxidation surface, large monolayer or the first layer of h-BN multilayers can be nullified (in terms of the h-BN material outcome) if a can form isothermally from surface-most precursor species prolonged reducing (NH ) atmosphere is used from the start arising from borazine decomposition – this route is (gas 1) or with the addition of a sufficient C H dose with a 2 2 particularly important for low solubility transition metal shorter NH annealing (Supplementary Figures S5c,d). catalysts (Figure 2b; ①; large dark monolayer h-BN domain). We systematically explored the various combinations of Isothermal growth of large additional h-BN layers underneath pre-growth Fe foil conditioning for the given process (Figure the first is facilitated by diffusion of species from the Fe 1a) and found that a balance between bulk O and C allows surface and sub-surface, especially in catalysts with high advantageous h-BN growth control. Remarkably, a specific Fe precursor solubilities, akin to a h-BN layer “intercalation". foil treatment process consisting of Fe oxidation, Ar annealing While the net flow of the precursor species is still to fill the (gas 1) and a short C H dose prior to growth achieves large 2 2 bulk of the foil with growth at the surface kinetically monolayer (> 100 µm) h-BN domains (Figure 1d with NH as stabilised , there is also lateral precursor diffusion to grow the gas 2; also Supplementary Figures S3g-i for Ar, vacuum and secondary layer which locally consumes the diffusing H respectively as gas 2). For all experiments, the borazine precursor. The concentration-driven, diffusive precursor exposure time was only 5 mins, giving an average growth rate supply via sub-surface or bulk has been directly confirmed for -1 of 30 µm min , one of the highest reported to date for a growth monolayer graphene for designed Cu-Ni alloy combinations temperature below 1000 °C. The described improvement in with different C solubilities by means of the C isotope growth outcome from Figure 1b to 1d is achieved by only labelling technique , and with ToF-SIMS measurements of targeted Fe foil conditioning prior to growth. Additionally, the 35,55 the bulk C level in Cu for graphene growth . These h-BN h-BN does not tend to nucleate along Fe striations suggesting layers (progressively lighter shade) look like triangular the removal of deleterious impurities (e.g. localised C) that pyramids and often have the same vertex, as shown in Figure otherwise would cause inhomogeneity. We find that the use of 2c. The solubilities of B and N in γ-Fe at 950 °C are around Ar as gas 1 is essential, while the choice of gas 2 is less critical. 56 46,57 49 0.11 at% and 0.10 at% (C solubility 6.2 at% ) However, H as gas 2 consistently gave worse results for respectively. These values are relatively high if put in Journal XX (XXXX) XXXXXX Author et al perspective with e.g. the C solubility in Cu of around the C counts increase again, while the oxygen level is 58 - 0.03 at% for graphene CVD at typical growth temperatures significantly lowered (Figure 3a, b, “C H treated”). The FeO 2 2 (~1030 °C). Even for this low precursor solubility catalytic counts of the oxygen-related profiles for the C H treated and 2 2 system there is a chance of isothermal bilayer or multilayer post-growth samples are close, within the noise level, 35,53,55 graphene growth unless precautions are taken . Another however, minute O differences can be determined from other pathway for h-BN growth is precipitation from the bulk upon oxide species. Supplementary Figure S9b shows that the FeO cooling due to the decreasing precursor solubility (Figure 2a). level in the sample after borazine exposure is slightly lower This process tends to result in aligned h-BN domains that are than after C H treatment, suggesting that some oxygen is 2 2 very small and thus have a noticeable dependence on the present during the growth and thus can potentially play an underlying grain structure of the metal catalyst as shown important role. Finally, the C profile after growth has lower schematically in Figure 2a. The alignment and shape can counts compared to the C H treated sample, but still 2 2 significantly change from one Fe grain to another. Hence, such sufficiently high to have an effect on h-BN growth. h-BN deposits can have distorted shapes dictated by the The ToF-SIMS data is consistent with the following catalyst grain orientation, and are small in typical CVD interpretation of the required balance of bulk C and O. The processes where the growth is rapidly quenched (Figure 2a,b; catalyst pre-growth oxidation minimises localised C surface ③). h-BN domains formed by precipitation do not typically contamination hence giving an improved homogeneity of h-BN nucleation, which does not follow the foil striations occur underneath the already-grown monolayer or multilayer h-BN under with our process conditions, likely due to the anymore. In terms of the choice of gas 1 (Figure 1a), the energy barrier associated with decoupling the existing utilisation of Ar is essential compared to reducing isothermally grown h-BN layer from the Fe surface upon rapid atmospheres (e.g. NH ) as it allows O diffusion into the bulk cooling. such that some level of O is retained. Further C impurity removal is thus achieved due to the scavenging effect of It is evident from our data (Figure 1) that pre-growth processing is of utmost importance, overshadowing the typical carbon by oxygen , which has been exploited for centuries in steelmaking, e.g. in the Bessemer process. Too high O bulk growth parameters (precursor pressure, temperature and time). In order to elucidate the effects of bulk dissolved species and concentration can cause etching effects (holes) in the growing consequently the reasons for the improved growth of h-BN on h-BN, distortion of its morphology, or require too much the conditioned Fe foils, we utilise depth-resolved time-of- precursor to reduce Fe and therefore results in irregular h-BN flight secondary-ion mass spectrometry (ToF-SIMS). For each deposits. Thus, by utilising C H to adjust the bulk O level 2 2 at a minute level and to fill the foil with C close to its solubility sample: as-received Fe, oxidised, Ar annealed, after C H 2 2 exposure in NH and after borazine exposure in NH we limit, thereby reducing the B and N solubilities, we suppress 3 3 analyse the negative ion intensity vs. the mass-to-charge ratio, the pathway of isothermal h-BN multilayer growth while m/z (Supplementary Figure S8a-e) and identify the FeO and obtaining additional control of the nucleation density. Indeed, - + C ions as prominent indicators of the dissolved oxygen and the reduction in the B ion count between O, C-treated and untreated foils can be seen from the ToF-SIMS depth profiles carbon. Figure 3a and b show the depth dependent profiles of these species (Methods), starting from the as-received foil and and a possible reduction in the NH ion counts is hinted as following each process step according to Figure 1a. We shown in Supplementary Figure S10a,b. Figure 3c emphasise that the ToF-SIMS measurements refer to a post schematically summarises our proposed mechanism of the growth state after a brief ambient exposure, although coaction of O and C species as to condition the bulk of the Fe foil to supress the pathway for B, N species to feed the growth precautions were taken to try to minimise air exposure (e.g. N packaging; Methods). During CVD the profiles are expected of h-BN multilayers via the bulk. to show a process- and time-dependent behaviour. The ToF- 3.3 CVD parameter optimisation for further SIMS data shows that compared to the as-received Fe foil the - enlargement of h-BN domains oxidised Fe foil has a significantly increased intensity of FeO species (note that the dip in the first 20 nm is due to the While the introduced simple foil conditioning procedure presence of a higher Fe oxide state, FeO Supplementary can easily give hundreds of micrometre monolayer h-BN Figure S9a). The C2 counts decrease within the first ~20 nm domain sizes (Figure 1a,d), we now focus on the CVD growth from the surface. After Ar annealing, we find that the oxygen- stage optimisation to achieve larger domain sizes. Currently, related profile partially levels out and while its overall counts h-BN domains of some hundreds of micrometres have been decrease compared to the oxidised sample (Figure 3a), the 16,17,19,34,60 demonstrated , but reaching the next order of remaining level of FeO is still very high. This behaviour is magnitude, beyond 1 mm, has proven difficult. Domain also linked to an overall significant reduction in the C counts “stitching” in h-BN has also been proposed as an alternative with depth (Figure 3b). In turn, following the steps of the 17,21,60 way to obtain large monocrystalline domains , however, developed CVD process, after the subsequent C H exposure, 2 2 possible B- or N- edge termination and random occurrence of Journal XX (XXXX) XXXXXX Author et al anti-parallel domain alignment mean that perfect “stitching” composition likely caused by the reduction of O and C 61,62 cannot be guaranteed . The occurrence of such defects has content. been confirmed by the observation of low angle domain Another well-known approach to achieve lower nucleation boundaries and overlapping domains with high resolution density for 2D material growth is to utilise higher growth 17,54,64 transmission electron and scanning tunnelling temperatures . Figure 5a shows the results for a CVD 61,63 microscopies . Hence, specifically here for h-BN, the process temperature (Figure 1a) of 1010 °C, whereby we also pathway of large crystal growth via a low nucleation density slightly lowered the borazine flow rate. The h-BN domain size approach has its merit. Additionally, the transfer methods need increases significantly with domain dimensions reaching to be developed specifically for defect-free h-BN domains, 1 mm even for a relatively short t of 45 mins. However, growth which is more challenging and will be discussed later in the at the same time, these h-BN domains show a high multilayer text. fraction, as highlighted in the optical images by the lighter Nucleation and growth require supersaturation; thus, one deposit in the h-BN domain centre. This observation is approach to suppress the nucleation density is to utilise lower consistent with our model introduced above, whereby the precursor flows to approach supersaturation more slowly. The diffusion of O and C is accelerated by temperature, thus the probability of new nucleation sites is thereby reduced, while species balance is rapidly changed, allowing the increased the growth is still possible, albeit at a slower rate. We lateral pathway of the B- and N- species through the bulk of investigate this strategy for the fixed growth temperature the catalyst, and hence the formation of multilayer h-BN (T ) of 980 °C (as in previous sections) by systematically growth sites underneath the existing first h-BN layer. With this growth lowering the precursor flow and increasing the synthesis time understanding, instead, we lowered the CVD process (t ) in conjunction with the developed pre-growth temperature to 950 °C, whereby the suitable bulk composition growth conditioning, so as to achieve partial coverage. We investigate of the Fe foil persists for longer, in favour of longer synthesis t values from 5 mins to 120 mins. A selection of the times (t = 4.5 hours) to supress the h-BN nucleation growth growth optical images of the resulting large-domain (~500 µm) fully- density using very low precursor flows (F = 0.01 sccm). borazine monolayer h-BN deposits are shown in Supplementary Figure 6b shows that under these conditions fully monolayer Figures S11a,b. There is a rapid decrease in the borazine flow h-BN domains form with dimensions up to 1.1 mm. rate required to obtain h-BN deposits vs. time, which becomes Notably, this optimised, lower temperature of 950 °C is less pronounced for longer times as shown in Figure 4a. Our well within standard quartzware operational regimes (< 1100 study here links to previous studies of the incubation time for °C) and is straightforward to implement in common CVD graphene nucleation, for example on Ni – a strongly reactors. We here focused on a simple CVD process flow interacting substrate with substantial C solubility. It was (Figure 1a) which can possibly be further optimised to achieve determined that the impingement flux of the precursor is faster processing times by utilising, for instance, a two-step inversely proportional to the incubation time squared . procedure, whereby a higher precursor “pulse” would rapidly Interestingly, if we apply such a fit to our data (Figure 4a, red trigger supersaturation and h-BN nucleation, followed by a curve), the behaviour does not match well for short times. It is lower precursor dose for domain expansion . as if the necessary flow of the precursor for short times is 3.4 Catalyst interface engineering for improved h-BN higher than predicted by the theory. This behaviour can be transferability again rationalised by the O etching effect due to its diffusion from the bulk of the Fe foil in our process. The additional For most applications scalable and clean transfer of the 2D precursor flow is necessary to compensate for the removal of layer away from the catalyst surface is required. This is a O. It is also evident that the effect becomes less pronounced significant challenge particularly as many catalytic metals that for longer synthesis times, suggesting that O gradually are very good growth substrates, such as Ni, Co and Fe, have depletes and has less of an effect. Figure 4b shows that there a strong interaction with h-BN and thus do not allow easy is a clear correlation between increased h-BN domain sizes h-BN layer removal. Such substrates typically require full wet and prolonged growth times, which is most pronounced for the 23,24 etching of the metal foil for h-BN transfer . Metal foil growth time up to one hour where the average domain size etching is well known to add contamination to the transferred increased from around 200 µm (5 mins) to 400 µm (60 mins); 2D layers . This contamination does not just come from the with maximum domain sizes of up to 600 µm (Supplementary catalyst metal itself but also from the release of Figure S11a,b). Beyond this time there is only a moderate species/contamination trapped in the bulk of the foil, e.g. Si- increase, suggesting that the bulk Fe foil composition is no 65,66 containing impurities . For our carburised Fe foils, we longer suitable for the suppression of new, secondary clearly observe that a porous “sponge” of carbon is formed nucleation. For extended experiments we also observe the after the foil is dissolved (Supplementary Figure S12a,b). This appearance of h-BN multilayer patches which is also observation is an indirect confirmation of the level of C bulk attributable to the time-dependent change in the foil dissolution, consistent with the growth model discussed Journal XX (XXXX) XXXXXX Author et al above. Previous work on h-BN growth on carburised Co and After transfer to 300 nm SiO /Si substrates there is a notable -1 Ni utilised full foil etching in order to release the h-BN layer, h-BN Raman peak with position of about 1371 cm and width -1 -1 however, the contamination issue was not discussed. Aside of 15 cm (13-17 cm range). The former value is blue-shifted -1 from environmental and economic considerations, clearly full from the bulk value (1365 cm ) and is typical for monolayer 17,70 foil etching is not an ideal transfer method, and especially not h-BN , while the low width value is comparable to 70 -1 when bulk dissolution of species is used to tune growth, as we exfoliated monolayer h-BN (typically 11-18 cm ) and the 17,34 -1 introduced above. Two alternative transfer techniques exists: highest quality CVD monolayer h-BN (13-16 cm ). We 67 17 bubbling transfer and dry peeling , but both often result in perform selected area electron diffraction (SAED) after macroscopic damage and tearing, especially for the strongly- transferring monolayer h-BN films consisting of 100-300 µm interacting catalysts. Depending on which metal catalyst is domains to TEM grids (Methods). Figure 7c shows SAED used, there are currently trade-offs for each method; patterns spanning a distance of 250 µm which do not show any specifically between scalability, cleanliness, cost and levels of rotation, confirming the crystallinity of such h-BN domains. defects introduced into the 2D layer . It should also be 3.5 Monolayer h-BN as graphene protection in emphasised that the larger in size and the better in crystal integrated manufacturing quality the 2D material domains are, the harder transfer may get with these non-destructive techniques . Our previous In order to highlight the quality and usability of as-grown work highlighted the challenges of h-BN transfer away from h-BN monolayer films and the introduced transfer process, we Fe, hence we seek here an improved transfer process matched here look at its use as an interfacial buffer layer between a to our catalyst and process flow (Figure 1a). monolayer graphene film and a commonly deposited The susceptibility of Fe to corrosion is well known, dielectric, Al O . We also adapt our methods to achieve a 2 3 especially in moist environments due to the formation of non- polymer-impurity free interface between h-BN and graphene passivating oxides . As much as this corrosion behaviour is 71,72 reported by previous studies . Here, the PC/h-BN stack is undesirable, e.g. in metallurgy, it turns out to be very useful to directly transferred to graphene/Cu and the resulting exploit for facile h-BN transfer. While previous works with PC/h-BN/graphene stack is delaminated (Methods). After in-situ X-ray photoelectron spectroscopy showed that a h-BN transferring the h-BN/graphene heterostructure onto SiO2/Si layer can temporarily protect Fe from oxidation in ambient substrates we then employ remote plasma enhanced atomic conditions for around a week, we find that in humid layer deposition (PEALD) to deposit a 20 nm thick Al O 2 3 environments h-BN does not provide a good protection. The layer. We investigate the effect of this deposition on graphene possibility of moisture penetration through the rust layer and h-BN/graphene as shown schematically in the insets of potentially allows to overcome the problem of the strong Figure 8a,b. Compared to thermal ALD, PEALD allows Fe/h-BN interaction. Figure 6 shows the schematic rationale deposition at lower temperatures, and potentially on plastic and results of this transfer approach. The key point as substrates, with wider precursor chemistries. Such processing highlighted in Figure 6a is that the Fe surface oxide is not self- thus opens integration routes with widely available plastic passivating in warm humid environments, i.e. the propagation substrates for flexible, transparent electronics, where the 2D of the surface oxide can partially proceed via the already- materials are utilised as active layers. The h-BN layer here is formed oxide. The processing steps are described in the crucial to protect the graphene layer from any damage during Methods section whereby a heated, controlled humidity the PEALD. Without h-BN the monolayer graphene region chamber was utilised (Supplementary Figure S2a). This (scan size 50 µm × 50 µm, Methods) shows a significant process indeed occurs as shown by the change in contrast increase in the Raman D:G ratio, from 2.5 % to 10 %, after (dark to light) in SEM (Figure 6b,c) and in colour (light grey PEALD at the given conditions (Figure 8a). While the intrinsic to brown) optically (Supplementary Figure S2b). Catalyst- defect density in our monolayer CVD graphene is very low, water oxidation was previously utilised for the Cu-graphene the damaging effect of PEALD could potentially be different system, albeit by submerging in water, rather than humidity if the intrinsic defect density is lowered even further, for control . After the oxidation and coating the Fe/h-BN example as in mechanically exfoliated graphene pieces . material with a temporary polymer support, the sample is Remarkably, a single layer of h-BN is able to protect graphene floated on the surface of an HCl solution (Methods). Fe oxides from such remote plasma damage, with no measurable change are etched much quicker (~minutes) than metallic Fe, in the D:G ratio before and after PEALD as seen from the therefore the surface oxide is rapidly and selectively removed histograms in Figure 8b. Also, the FWHM of the 2D peak or (Figure 6d). The h-BN/polymer layer spontaneously detaches other graphene characteristics were not significantly affected (Figure 6e,f), as demonstrated here for 2” substrates, and can (Supplementary Figures S13a-f), thus allowing us to create a be transferred to the target substrate. Figure 7 shows optical, high quality Al O /h-BN/graphene heterostructure. 2 3 Raman and selected area electron diffraction (SAED) Interestingly, we find that such Al O /h-BN/graphene 2 3 characterisation of as-transferred h-BN monolayer domains. heterostructures exhibit significantly improved stability under Journal XX (XXXX) XXXXXX Author et al laser excitation, compared to just unencapsulated 2D layers. improved stability under high power laser excitation paving Figure 8c compares pristine graphene, h-BN/graphene and the way for low-defect (opto-)electronic devices based on 2D Al O /h-BN/graphene all on SiO /Si (300 nm) substrates after materials. 2 3 2 exposure to very high laser power densities. A 20 mW laser, Acknowledgements 532 nm laser was utilised with a 100× objective with an -2 approximate power density of ~0.5 Wµm for 2 mins V.B., M.O., D.N. and S.H. acknowledge funding from the (Methods). Pristine high-quality monolayer graphene (~1 mm European Union’s Horizon 2020 research and innovation domain size, Methods) is predominantly destroyed, as program under grant agreement No number 785219. B.C. highlighted by the very high and broad D and G peaks with a acknowledges funding from the European Union’s Horizon ratio of 70% after the laser exposure (Figure 8c). The 2D peak 2020 research and innovation program under grant agreement is also significantly broadened. Monolayer-h-BN-protected No number 796388. J.A.-W. acknowledges the support of his graphene performed better, but still, a very high D peak Research Fellowship from the Royal Commission for the appeared (D:G ratio of 30 %), and broadening was observed Exhibition of 1851. R.S.W. acknowledges a EU Marie of the G and 2D peaks. In contrast, the Al O /h-BN/graphene 2 3 Skłodowska-Curie Individual Fellowship (Global) under grant sample did not show any significant degradation, with only a ARTIST (No. 656870) from the European Union’s Horizon minor increase in the D:G ratio (from 2.5 % to 3 %), while the 2020 research and innovation programme. Y. F., V.-P. V.-R., widths of the 2D and G peaks remained unchanged. We O.B. and S.H. acknowledge funding from EPSRC hypothesise that the thicker alumina layer is an excellent (EP/P005152/1, and Doctoral Training Award barrier to atmospheric gases, which supresses thermal- or EP/M508007/1). V.-P. V.-R. further acknowledges support photo-activated chemical damage to graphene under such high from NPL. B.B. and A.J.P. acknowledge funding from the laser power densities. It is thus evident that the h-BN U.K. Department of Business, Energy and Industrial Strategy monolayer enables defect-free graphene passivation with (NPL Project Number 121452). PEALD, which potentially can be expanded to other oxygen plasma-sensitive materials, such as organic films or ORCID iDs perovskites. Additionally, graphene passivated with alumina Vitaliy Babenko 0000-0001-5372-6487 and h-BN has enhanced resistance to high laser power Barry Brennan 0000-0002-5754-4100 densities, which is required in applications like mode-locked Barbara Canto 0000-0001-5885-9852 lasers, optical modulators or high power photodetectors. Robert Weatherup 0000-0002-3993-9045 4. Conclusions Stephan Hofmann 0000-0001-6375-1459 In this work we present a route for monolayer h-BN References utilisation towards applications – starting from the growth 1. Watanabe, K., Taniguchi, T. & Kanda, H. 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The growth time (t ) and growth temperature growth (T ) for (b-d) are 5 mins and 980 °C respectively. (a) The CVD process diagram showing that the Fe foil can be pristine or oxidised; can be growth annealed in different gas atmospheres and can be carburised with acetylene before h-BN growth with borazine. Optical images of the h-BN deposits after post-growth Fe oxidation are shown. Fe grains can be seen as background of different colours; lighter triangular shapes are monolayer h-BN and white deposits are multilayer pyramid-like h-BN deposits. (b) A NH based simple growth process on pristine Fe showing small triangular pyramid-like domains; additional growth results on pristine Fe foils for Ar, vacuum and H are shown in Supplementary Figure S3a-c (c) A NH based process with C H addition before h-BN synthesis on pristine Fe foils, resulting in larger lateral monolayer 3 2 2 deposits. Additional experiments for the Ar, vacuum and H based processes with C H are shown in Supplementary Figure S3d-f. (d) 2 2 2 Synthesis of large, fully monolayer h-BN domains on oxidised Fe foils with C H addition based on Ar annealing (gas 1) and NH carrier gas 2 2 3 (gas 2) during growth. Additional experiments on foils conditioned in such a way for Ar, vacuum and H are shown in Supplementary Figure S3g-i. Journal XX (XXXX) XXXXXX Author et al Figure 2. An outline of h-BN growth routes on iron. (a) A schematic diagram of the paths of B, N- species to h-BN growth sites: (1) isothermal growth of the top domain from surface species, (2) isothermal growth of large secondary layers via layer “intercalation” with species diffusing through the bulk/near-surface resulting in an inverted pyramidal shape; (3) growth by precipitation from the bulk on cooling resulting in small h-BN domains that are often aligned or have disturbed but consistent shape within a specific Fe grain. Such domains do not appear underneath the isothermally-grown layers or full coverage films. (b-c) SEM images of a monolayer regions and a multilayer pyramid illustrating exemplar domains grown via paths 1-3. Journal XX (XXXX) XXXXXX Author et al Figure 3. Fe foil composition analysis close to the surface for h-BN growth. (a-b) ToF-SIMS measurements of oxygen and carbon levels in the - - Fe foil, represented by FeO and C intensities normalised to total ion counts (Methods), at different stages of the synthesis process: (1) as- received foil contains some O and C; (2) Fe foil oxidation leads to the removal of most of the C within the first 20 nm of the surface and a significant increase in surface O; (3) Ar annealing of the oxidised sample causes a reduction in the O intensity, while decreasing the level of C in the foil; (4) after C H dosing, there is a significant decrease in the O level and an increase in the bulk C level; (5) after the growth of 2 2 h-BN domains a small further decrease in the already low iron oxide level can be measured (Supplementary Figure S9), and additionally the level of C is decreased, suggesting its role in the h-BN growth in pre-filling the bulk. (c) A schematic diagram showing that the isothermal secondary layer growth process is suppressed with the presence of oxygen and carbon in the bulk of the Fe foil leading to monolayer-only growth and suppressed nucleation density. Journal XX (XXXX) XXXXXX Author et al Figure 4. h-BN growth optimisation for combinations of precursor flow and growth times (t ) for a fixed temperature of T = 980 °C. growth growth (a) Borazine flow rate needed for a specific growth time to obtain separated h-BN domains; showing a rapid decrease. The red solid line is the inverse quadratic fit expected for the pristine metal catalyst to reach supersaturation, fitted to the points for t > 60 mins. The growth dashed line is a guide to the eye. (b) Triangular h-BN domain sizes (mean, maximum and 1 s.d. error bars are plotted) corresponding to the t times from (a). growth Journal XX (XXXX) XXXXXX Author et al Figure 5. Optical images of ultra-large h-BN domains after Fe foil oxidation. (a) A h-BN domain grown at increased temperature (1010 °C) showing a large monolayer domain and patches of multilayer (white). (b) A h-BN domain grown at a reduced temperature (950 °C), but increased time showing a fully monolayer domain. Journal XX (XXXX) XXXXXX Author et al Figure 6. Tailored transfer of h-BN from Fe foils. (a) A diagram of oxidation of Fe underneath h-BN films via non-passivating iron oxides in humid environments. SEM images of the surface using the InLens detector showing (b) unoxidised foils with h-BN immediately after growth; (c) partially oxidized surface with oxidation in a controlled-humidity apparatus (Supplementary Figure S2a). An optical image also showing a colour change is presented in Supplementary Figure S2b. (d) A diagram of HCl etching of the thin surface iron oxides leading to PC/h-BN delamination. Optical images of the PC/h-BN/Fe samples (e) during and (f) after HCl delamination. Journal XX (XXXX) XXXXXX Author et al Figure 7. h-BN material characterisation. (a) An optical image showing exemplar transferred monolayer h-BN domains, (b) Raman signal -1 -1 after subtracting the SiO /Si background showing the E peak position at 1371 cm with FWHM of around 15 cm , (c) SAED TEM analysis 2 2g of a h-BN domain spanning a distance of 250 µm without changes in the diffraction pattern. Journal XX (XXXX) XXXXXX Author et al Figure 8. Raman spectroscopy characterisation of graphene with h-BN and PEALD alumina. (a) The D:G ratio histograms of graphene transferred to Si/SiO substrates before and after PEALD of alumina showing a significant increase in the ratio and therefore the defect density in graphene due to the plasma induced damage. (b) The D:G ratio histograms of h-BN/Gr before and after PEALD of alumina showing no change in the ratio and therefore unchanged defect density. (c) Raman spectra of graphene exposed to high laser power densities for 2 mins (100× objective) showing that pristine graphene is significantly damaged after the exposure. While h-BN provided some protection, a significant D peak emerged and the 2D and G peaks broadened. Notably, alumina encapsulated graphene, enabled by h-BN protection, did not show a significant change in the spectrum after such laser exposure.

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Condensed Matter – arXiv (Cornell University)

Published: Nov 26, 2020

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