Russian Microelectronics Volume 31 Issue 3

Journal Article

Power Microwave FETs Using Epitaxial AlGaAs/GaAs Structures

Bakarov, A.; Zhuravlev, K.; Toropov, A.; Shamirzaev, T.; Myakishev, Yu.;

2004 Russian Microelectronics

MBE layers of high-purity Al x Ga1 – x As solid solutions are produced with 0 ≤ x ≤ 0.38. Using this material, heterostructure FETs are fabricated for high-power microwave applications. They are demonstrated to deliver up to 1.2 W/mm at 18 GHz under saturation.

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Journal Article

New All-nMOS Quasi-adiabatic Dynamic Logic

Losev, V.; Starosel'skii, V.

2004 Russian Microelectronics

doi:10.1023/A:1015454802271

A new type of quasi-adiabatic dynamic MOS logic is proposed, which uses only n-channel FETs. With this approach, an N-input logic gate has N + 2 devices. The term quasi-adiabatic means that most of the energy delivered to the load capacitor returns to the power supply. The gates can be powered...

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Journal Article

Logic Synthesis of Series-MOSFET Programmable Arrays

Bibilo, P.

2004 Russian Microelectronics

doi:10.1023/A:1015406919110

The design of custom VLSIs for minimum die area is dealt with. The programmable-array implementation of a given set of completely specified Boolean functions in disjunctive normal form is addressed. Two types of array are considered. The first one differs from the programmable logic array in...

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Journal Article

Logic-Programming Approach to CMOS Design: Describing Gate–Switch Networks in Predicates

Lyul'kin, A.

2004 Russian Microelectronics

doi:10.1023/A:1015458903180

Logic networks containing both gates and switches are described in predicates. This approach allows one to check the behavior of a network against that of a reference network or against a given behavioral description. The formalism is presented in PROLOG, a logic-programming language for solving...

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Journal Article

New VLSI Multilevel Metallization Technology Using Polyimide Insulation

Sen'ko, S.; Snitovskii, Yu.

2004 Russian Microelectronics

doi:10.1023/A:1015411020018

The fabrication of reliable VLSI multilevel metal interconnections using polypyromellitimide as an interlevel insulator is studied experimentally. A new process that enables one to considerably improve insulation performance is described. The improvement is achieved by optimizing the conversion...

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Journal Article

Dry Etching of Copper Using Chlorine: A Review

Efremov, A.; Svettsov, V.

2004 Russian Microelectronics

doi:10.1023/A:1015463004089

Scientific and engineering aspects of the dry etching of copper using chlorine are reviewed. Some new results are included.

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Journal Article

ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment

Gruzintsev, A.; Volkov, V.; Matveeva, L.

2004 Russian Microelectronics

doi:10.1023/A:1015415120927

The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. The substrate is essentially held at a negative bias voltage during the process. The dependence of the lattice structure and photoluminescence spectra of the films on the type of substrate...

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Journal Article

Luminescent Properties of ZnO Films Doped with Group-IB Acceptors

Gruzintsev, A.; Volkov, V.; Khodos, I.; Nikiforova, T.; Koval'chuk, M.

2004 Russian Microelectronics

doi:10.1023/A:1015467204997

It is shown by experiment that the doping of ZnO films with Group-IB acceptors—Cu, Ag, and Au—influences the photoluminescence spectra of the films as well as their electrical properties. Specifically, this reduces the emission in the UV region and intensifies it in the visible region. The...

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Russian Microelectronics Volume 31 Issue 3

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