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Some problems of producing high purity silicon carbide coatings by chemical vapour deposition with recirculation of raw material (methyltrichlorosilane) were considered. Recirculating technology provides high deposition rate (up to 1 mm/h) without reducing of total yield and limits the...
This paper presents the mechanical properties and curves of flows of alloys—solid solutions of systems copper-manganese, copper-aluminium and copper-nickel in temperature interval 4,2–1100 K.
Theoretical and experimental studies of the physicochemical and energy fundamentals of the converter production of high quality steels are described. Given are the design indices of the technical and economic effectiveness of conversion of dry pig iron in the converters. The resource-saving...
Problems of a new technological process of multilayer silicon structure formation by direct bonding of silicon wafers (SDB) are reviewed. The main accent is made on the consideration of possible mechanisms of semiadhesive bonding of silicon surfaces at low-temperature and high-temperature steps...
Analytical and experimental equations to determine force conditions of an extrusion process and rational relationship of billet sizes, as well as to calculate specified sizes of die channels and metal flow rate in shape extrusion are discussed.
Scientific and practical aspects of ultrasonic treatment of light alloy melts followed with development of acoustic cavitation in liquid metals are discussed. It is shown, that the ultrasonic melt treatment raises the rate of degassing and fine filtration of light alloy melts and very strongly...
A background of Russian Academy of Natural Sciences' (RANS) organization and the main scientific task of activities of the “Metallurgiya” department of Mining-Metallurgical Section are described.
Radioactive waste arranged inside the container releases heat as a result of radioactive decay. If the heat power is sufficient, the geological rock near the container melts and the container moves into the Earth's depths. This method of self-immersion of radioactive waste may be suggested as an...
This work reports XPS data on buried dielectric layers obtained using low-dose ion-beam synthesis. Oxygen and/or nitrogen were sequentially implanted with an energy of 150 keV into (100) n-type silicon wafers at temperatures about 650° and 350°C. After the implantation, the thermal annealing was...
Ternary solid solutions BixSb1-xTe and especially Bi2Te1-ySey grown by vertical zone melting have the tendency for dendrite liquation. It causes considerable chemical inhomogeneity of the material and multicomponent structure. The effect of long-term annealing at 380–400°C on microstructure,...
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