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Proposes a finite element method for numerical simulation of the hydrodynamic model of semiconductor devices. Presents some scaling factors and a variational formulation. Uses the P 1 ‐ iso P 2 element to discretize this formulation and the GMRES (Generalized Minimum RESidual) algorithm to solve...
Charge iteration is an iterative procedure for the finite element computation of unbounded electrical fields, created by voltaged conductors. It makes use of a fictitious boundary, enclosing all the conductors, on which the electrical potential is first guessed and then iteratively improved...
Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model to derive the...
Recent advances in the fabrication technology of heterojunction semiconductor nanostructures have made possible the realization of systems with extremely small sizes. In these devices, electrons are confined along some directions and are free to move in others. Semiconductor nanostructures have...
Presents a direct solution method for the determination of quantities such as capacitance, conductance and inductance from the finite element representation of electrostatic and magnetostatic problems. The method can be used to complement existing finite element software which utilizes a field...
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