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A halfimplicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.
This paper deals with a model for the numerical calculations of thermal fields in superconducting a.c. magnet coils. The solution is based on Poisson's partial differential equation solved by the finite difference technique with the GuassSeidel Liebmann iteration method. The model contains...
In this paper, the electrical parameters of the duct electrostatic precipitators with bundle wires, as discharge electrodes, are calculated and reported. Variation of mobility for both ions and particles in the space surrounding the energized subwires is taken into consideration. The method used...
A onedimensional finite difference scheme adapted to high order moment equation models arising in the approximate description of semiconducting submicron structures is presented. The new scheme is a natural extension of the ScharfetterGummel scheme used in driftdiffusion models. Through local...
A new method is derived for solving systems of ordinary differential equations of the first order. It is fully explicit, requires no matrix inversion, and shows relatively large time steps. The one and twodimensional diffusion equations and the onedimensional electron transport equations of...
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