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An analytical theory based on a perturbation approach is presented to model planar resistors with a stochastic edge. The theoretical analysis is confirmed by Monte Carlo simulations.
This paper examines several modifications to Newton's method for the numerical solution of the nonlinear Poisson equation which describes the electrostatic potential distribution in a semiconductor device. Two methods for a more efficient solution of the equation when the device is a...
A simple approach is developed for modelling the distribution of dopant in crystals grown by the Czochralski technique. Allowance is made for the temperature dependence of the diffusivity and for the diffusion of dopant behind the moving boundary. It is found that the effect can make a...
Ionacoustic wave propagation in plasma is discussed. Analytical and numerical solutions are given for onedimensional plane waves. The similarity of the ionacoustic waves to the waves associated with an electrical transmission line is pointed out and the solved examples are compared with...
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