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A mixed variational formulation of the free boundary problem involved in the analysis of reversebiased semiconductor devices is put forward. This can be profitably used in the investigation of the field distribution near the junction and at the surface of devices. A peculiar feature of the new...
In a previous paper COMPEL, Vol. 2, No. 3, pp. 117139, an analysis was presented of a discretization procedure for a class of elliptic problems, including the ScharfetterGummel method for the continuity equations of stationary semiconductor device models. Here, the previous results are extended...
The method presented here concerns the analysis of the steadystate performance of semiconductor switching devices SSDs on the assumption that they are represented by resistances whose values vary periodically in time. The method is reduced to the analysis of a system of linear differential...
A 3D eddy current code, TRIFOU, has been used to simulate eddy currents flowing around cracks in very thick conductors, which is a fully 3D situation. The measurement set and the probe have also been simulated so that we can compare numerical and experimental output signals. Storage and CPUtime...
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