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This paper describes a technique for computing characteristic impedance and capacitance of transmission lines using the finiteelement method, which guarantees both upper and lower bounds to the exact solution without any additional programming beyond that required for the initial problem...
We discuss three models describing the carrier densities in highly doped silicon, which have been used for process and device simulation. We calculate nie for each of the models for various doping concentrations within temperature ranges interesting for the device and process simulation. We try...
Infinite elements provide one of the most attractive alternatives for dealing with differential equations in unbounded domains. The region where loads, sources, inhomogeneities and anisotropics exist is modelled by finite elements and the far, uniform region is represented by infinite elements....
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